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參數(shù)資料
| 型號(hào)： | V826632G24S |
| 廠商： | Mosel Vitelic, Corp. |
| 英文描述： | 256 MB 200-PIN DDR UNBUFFERED SODIMM 2.5 VOLT 32M x 64 |
| 中文描述： | 256 MB的200 - pin的DDR SODIMM內(nèi)存緩沖2.5伏32M的× 64 |
| 文件頁(yè)數(shù)： | 9/14頁(yè) |
| 文件大?。?/td> | 213K |
| 代理商： | V826632G24S |
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MOSEL VITELIC
V826632G24S
9
V826632G24S Rev. 1.1 July 2002
DDR SDRAM I
DD
SPEC TABLE
* Module I
DD
was calculated on the basis of component I
DD
and can be differently measured according to DQ loading cap.
Detailed test conditions for DDR SDRAM IDD1 & IDD
IDD1 : Operating current: One bank operation
1. Typical Case : Vdd = 2.5V, T=25’ C
2. Worst Case : Vdd = 2.7V, T= 10’ C
3. Only one bank is accessed with tRC(min), Burst Mode, Address and Control inputs on NOP edge are changing once
per clock cycle. lout = 0mA
4. Timing patterns
- DDR200(100Mhz, CL=2) : tCK = 10ns, CL2, BL=4, tRCD = 2*tCK, tRAS = 5*tCK
Read : A0 N R0 N N P0 N A0 N - repeat the same timing with random address changing
*50% of data changing at every burst
- DDR266B(133Mhz, CL=2.5) : tCK = 7.5ns, CL=2.5, BL=4, tRCD = 3*tCK, tRC = 9*tCK, tRAS = 5*tCK
Read : A0 N N R0 N P0 N N N A0 N - repeat the same timing with random address changing
*50% of data changing at every burst
- DDR266A (133Mhz, CL=2) : tCK = 7.5ns, CL=2, BL=4, tRCD = 3*tCK, tRC = 9*tCK, tRAS = 5*tCK
Read : A0 N N R0 N P0 N N N A0 N - repeat the same timing with random address changing
*50% of data changing at every burst
Legend : A=Activate, R=Read, W=Write, P=Precharge, N=NOP
Symbol
C0(DDR333@CL=2.5) B1(DDR266@CL=2)
B0(DDR266@CL=2.5) A1(DDR200@CL=2)
Unit
Notes
Typical
Typical
Typical
Typical
IDD0
880
800
800
640
mA
IDD1
1120
1000
1000
800
mA
IDD2P
200
200
200
160
mA
IDD2F
365
360
360
320
mA
IDD2Q
340
280
280
240
mA
IDD3P
240
240
240
200
mA
IDD3N
460
400
400
320
mA
IDD4R
1360
1360
1360
1120
mA
IDD4W
1680
1480
1480
1200
mA
IDD5
1600
1480
1480
1200
mA
IDD6
Normal
24
24
24
24
mA
Low power
15
15
15
15
mA
Optional
IDD7A
2800
2600
2600
2120
mA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| V826664G24S | 512 MB 200-PIN DDR UNBUFFERED SODIMM 2.5 VOLT 64M x 64 |
| V827316K04S | 2.5 VOLT 16M x 72 HIGH PERFORMANCE UNBUFFERED ECC DDR SDRAM MODULE |
| V827332K04S | 2.5 VOLT 32M x 72 HIGH PERFORMANCE UNBUFFERED ECC DDR SDRAM MODULE |
| V827332N04S | 2.5 VOLT 32M x 72 HIGH PERFORMANCE REGISTERED ECC DDR SDRAM MODULE |
| V827464K24S | 2.5 VOLT 64M x 72 HIGH PERFORMANCE UNBUFFERED ECC DDR SDRAM MODULE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| V826632K24S | 制造商:MOSEL 制造商全稱(chēng):MOSEL 功能描述:2.5 VOLT 32M x 64 HIGH PERFORMANCE UNBUFFERED DDR SDRAM MODULE |
| V826664G24S | 制造商:MOSEL 制造商全稱(chēng):MOSEL 功能描述:512 MB 200-PIN DDR UNBUFFERED SODIMM 2.5 VOLT 64M x 64 |
| V826664K24S | 制造商:MOSEL 制造商全稱(chēng):MOSEL 功能描述:2.5 VOLT 64M x 64 HIGH PERFORMANCE UNBUFFERED DDR SDRAM MODULE |
| V827316K04S | 制造商:MOSEL 制造商全稱(chēng):MOSEL 功能描述:2.5 VOLT 16M x 72 HIGH PERFORMANCE UNBUFFERED ECC DDR SDRAM MODULE |
| V827332K04S | 制造商:MOSEL 制造商全稱(chēng):MOSEL 功能描述:2.5 VOLT 32M x 72 HIGH PERFORMANCE UNBUFFERED ECC DDR SDRAM MODULE |
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