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參數(shù)資料
| 型號： | VBH40-05B |
| 廠商： | IXYS CORP |
| 元件分類： | JFETs |
| 英文描述： | Module with HiPerFETTM H-Bridge and Single Phase Mains Rectifier Bridge |
| 中文描述： | 40 A, 500 V, 0.116 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 54K |
| 代理商： | VBH40-05B |
IXYS Semiconductor GmbH
Edisonstr. 15,
Phone: +49-6206-503-0, Fax: +49-6206-503627
D-68623 Lampertheim
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670
1 - 3
2002 IXYS All rights reserved
Module with HiPerFET
TM
H-Bridge and
Single Phase Mains Rectifier Bridge
Application
primary side of mains supplied
welding converters
switched mode power supplies
induction heaters
Features
H-bridge with
HiPerFET
TM
technology:
- low R
- unclamped inductive switching
(UIS) capability
- dv/dt ruggedness
- fast intrinsic reverse diode
- Kelvin source for easy drive
- low inductive, symmetrical current
paths
thermistor for internal temperature
measurement
package:
- high level of integration - only one
power semiconductor module
required for the whole primary side
- solder terminals for PCB mounting
- isolated DCB ceramic base plate
Mains Rectifier Bridge D1 - D4
Symbol
Conditions
Maximum Ratings
V
RRM
1200
V
I
FAV25
I
FAV80
T
C
= 25°C; sine 180°
T
C
= 80°C; sine 180°
45
33
A
A
I
FSM
T
VJ
= 25°C; t = 10 ms sine 50 Hz
400
A
Symbol
Conditions
Characteristic Values
(T
VJ
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
F
I
F
= 20 A
T
VJ
= 25°C
T
VJ
= 125°C
1.1
1.0
1.2
V
V
I
R
V
R
= V
RRM
T
VJ
= 25°C
T
VJ
= 125°C
0.02
mA
mA
0.4
R
thJC
R
thJS
(per diode)
with heat transfer paste
1.42 K/W
2.8
K/W
V
DSS
= 500 V
R
DSon
= 116 m
V
RRM
= 1200 V
I
DAV25
= 90 A
IXYS reserves the right to change limits, test conditions and dimensions.
VBH 40-05B
Preliminary
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