參數(shù)資料
型號: VG26S16405ET-5
英文描述: x4 EDO Page Mode DRAM
中文描述: x4 EDO公司頁面模式的DRAM
文件頁數(shù): 7/27頁
文件大小: 214K
代理商: VG26S16405ET-5
Document:1G5-0124
Rev.1
Page 7
VIS
VG26(V)(S)17405
4,194,304 x 4 - Bit
CMOS Dynamic RAM
DC Characteristics ; 5-Volt Version (Cont.)
(T
a
= 0 to + 70
°C
,
V
CC
= + 5V
%,V
SS
= 0V)
Notes:
1. I
CC
is specified as an average current. It depends on output loading condition and cycle rate when the
device is selected. I
CC
max is specified at the output open condition.
2. Address can be changed once or less while RAS = V
IL
.
3. For I
CC4
, address can be changed once or less within one EDO page mode cycle time.
Parameter
Symbol
I
LI
Test Conditions
VG26(V)(S) 17405
-5
Max
Unit
Notes
-6
Min
Min
Max
Input leakage current
+ 0.5V
-5
5
-5
5
Output leakage current
I
LO
+ 0.5V
Dout = Disable
I
OH
= - 5mA
I
OL
= + 4.2mA
-5
5
-5
5
Output high Voltage
V
OH
V
OL
2.4
-
2.4
-
V
Output low voltage
-
0.4
-
0.4
V
10
±
0V
V
IN
V
CC
μ
A
0V
V
OUT
V
CC
μ
A
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