參數(shù)資料
型號(hào): VG36128161BFL-7L
廠商: VANGUARD INTERNATIONAL SEMICONDUCTOR CORP
元件分類: DRAM
英文描述: 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
封裝: 10 X 9 MM, VFBGA-54
文件頁(yè)數(shù): 26/69頁(yè)
文件大小: 1335K
代理商: VG36128161BFL-7L
Document :1G5-0183
Rev.5
Page 32
VIS
VG36128401B / VG36128801B / VG36128161B
CMOS Synchronous Dynamic RAM
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10 T11
T12
T13 T14
T15
AC Parameters for Read Timing (2 of 2)
CLK
CKE
CS
RAS
CAS
WE
A10
ADD
DQM
DQ
Burst Length=2, CAS Latency=3
tLZ
t
HZ
Hi-Z
Activate
Command
Bank A
Read
Command
Bank A
Activate
Command
Bank B
Read with
Auto Precharge
Bank B
Precharge
Command
Bank A
Activate
Command
Bank A
t
CH tCL
t
CKS
t
CK3
t
CMS
t
CMH
t
AH
t
AS
t
RRD
t
RAS
t
RC
t
RP
t
RCD
tAC3
t
OH
tAC3
QAa0
QAa1
QBa0
QBa1
tOH
tHZ
Command
t
CKH
Begin Auto
Precharge
Bank B
* BS1=
”L”, Bank C,D = Idle
*BS0
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