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| 型號： | VG36641641DTL-8H |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | CMOS Synchronous Dynamic RAM |
| 中文描述： | 同步動態(tài)隨機(jī)存儲器的CMOS |
| 文件頁數(shù)： | 11/69頁 |
| 文件大?。?/td> | 1364K |
| 代理商： | VG36641641DTL-8H |
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Document :1G5-0177
Rev.2
Page 11
VIS
VG36644041DT / VG36648041DT / VG36641641DT
CMOS Synchronous Dynamic RAM
2.4 Operative Command Table (note 1)
HCurrent state
CS
RAS CAS WE
Address
Command
Action
Notes
Idle
H
X
X
X
X
DESL
Nop or Power down
2
L
H
H
X
X
NOP or BST
Nop or Power down
2
L
H
L
H
BA, CA, A10
READ/READA
ILLEGAL
3
L
H
L
L
BA, CA, A10
WRIT/WRITA
ILLEGAL
3
L
L
H
H
BR, RA
ACT
Row active
L
L
H
L
BA, A10
PRE/PALL
Nop
L
L
L
H
X
REF/SELF
Refresh or Self refresh
4
L
L
L
L
Op-Code
MPS
Mode register access
Row active
H
X
X
X
X
DESL
Nop
L
H
H
X
X
NOP or BST
Nop
L
H
L
H
BA, CA, A10
READ/READA
Begin read : Determine AP
5
L
H
L
L
BA, CA, A10
WRIT/WRITA
Begin write : Determine AP
5
L
L
H
H
BA, RA
ACT
ILLEGAL
3
L
L
H
L
BA, A10
PRE/PALL
Precharge
6
L
L
L
H
X
REF/SELF
ILLEGAL
L
L
L
L
Op-Code
MRS
ILLEGAL
Read
H
X
X
X
X
DESL
Continue burst to end
Row active
L
H
H
H
X
NOP
Continue burst to end
Row active
L
H
H
L
X
BST
Burst stop
Row active
L
H
L
H
BA, CA, A10
READ/READA
Term burst, new read : Determine AP
7
L
H
L
L
BA, CA, A10
WRIT/WRITA
Term burst, start write : Determine AP
7,8
L
L
H
H
BA, RA
ACT
ILLEGAL
3
L
L
H
L
BA, A10
PRE/PALL
Term burst, precharging
L
L
L
H
X
REF/SELF
ILLEGAL
L
L
L
L
Op-Code
MRS
ILLEGAL
Write
H
X
X
X
X
DESL
Continue burst to end
write recovering
L
H
H
H
X
NOP
Continue burst to end
write recovering
L
H
H
L
X
BST
Burst stop
Row active
L
H
L
H
BA, CA, A10
READ/READA
Term burst, start read : Determine AP
7,8
L
H
L
L
BA, CA, A10
WRIT/WRITA
Term burst, new write : Determine AP
7
L
L
H
H
BA, RA
ACT
ILLEGAL
3
L
L
H
L
BA, A10
PRE/PALL
Term burst, precharging
9
L
L
L
H
X
REF/SELF
ILLEGAL
L
L
L
L
Op-Code
MRS
ILLEGAL
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