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參數(shù)資料
| 型號： | VN0300 |
| 廠商： | Supertex, Inc. |
| 英文描述： | N-Channel Enhancement-Mode Vertical DMOS FETs |
| 中文描述： | N溝道增強(qiáng)型場效應(yīng)管垂直的DMOS |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 433K |
| 代理商： | VN0300 |
2
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 FAX: (408) 222-4895
www.supertex.com
11/12/01
2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
VN0300
Package
I
D
(continuous)*
I
D
(pulsed)
Power Dissipation
@ T
C
= 25
°
C
θ
jc
°
C/W
θ
ja
°
C/W
TO-92
0.64A
3A
1W
125
170
*
I
D
(continuous) is limited by max rated T
j
.
Thermal Characteristics
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BV
DSS
V
GS(th)
I
GSS
I
DSS
Drain-to-Source Breakdown Voltage
30
V
V
GS
= 0V, I
D
=10
μ
A
V
GS
= V
DS
, I
D
= 1mA
V
GS
=
±
30V, V
DS
= 0V
V
GS
= 0V, V
DS
= Max Rating
V
GS
= 0V, V
DS
= 30V
T
A
= 125
°
C
V
GS
= 10V, V
DS
= 10V
V
GS
= 5V, I
D
= 0.3A
V
GS
= 10V, I
D
= 1A
V
DS
= 10V, I
D
= 0.5A
Gate Threshold Voltage
0.8
2.5
V
Gate Body Leakage
100
nA
Zero Gate Voltage Drain Current
10
500
μ
A
I
D(ON)
R
DS(ON)
ON-State Drain Current
1
A
Static Drain-to-Source ON-State Resistance
3.3
1.2
G
FS
C
ISS
C
OSS
C
RSS
t
(ON)
t
(OFF)
V
SD
Forward Transconductance
200
m
Input Capacitance
190
Common Source Output Capacitance
110
pF
Reverse Transfer Capacitance
50
Turn-ON Time
30
Turn-OFF Time
30
Diode Forward Voltage Drop
0.9
V
I
SD
= 0.63A, V
GS
= 0V
Notes:
1. All D.C. parameters 100% tested at 25
°
C unless otherwise stated. (Pulse test: 300
μ
s pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Electrical Characteristics
(@ 25
°
C unless otherwise specified)
V
GS
= 0V, V
DS
= 20V
f = 1 MHz
ns
V
DD
= 25V, I
D
= 1.0A
R
GEN
= 25
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
10V
V
DD
R
gen
0V
0V
Switching Waveforms and Test Circuit
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| VN0300B | 制造商:SUPERTEX 制造商全稱:SUPERTEX 功能描述:N-Channel Enhancement-Mode Vertical DMOS Power FETs??? |
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