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參數(shù)資料
| 型號： | VN0300M |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 700MA I(D) | TO-237 |
| 中文描述： | 晶體管| MOSFET的| N溝道| 30V的五（巴西）直| 700mA的一（d）|至237 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 36K |
| 代理商： | VN0300M |
VN0300L
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
STATIC CHARACTERISTICS
Drain–Source Breakdown Voltage
(VDS = 0, ID = 10
μ
A)
V(BR)DSS
30
–
V
Zero Gate Voltage Drain Current
(VDS = 48 Vdc, VGS = 0)
(VDS = 48 Vdc, VGS = 0, TA = 125
°
C)
IDSS
–
–
10
500
μ
A
Gate–Body Leakage
(VDS = 0, VGS =
±
30 V)
IGSS
–
±
100
nA
Gate Threshold Voltage
(VDS = VGS, ID = 1.0 mA)
VGS(th)
0.8
2.5
V
On–State Drain Current (Note 1.)
(VDS = VGS, ID = 1.0 mA)
ID(on)
1.0
–
A
Drain–Source On Resistance (Note 1.)
(VGS = 5.0 V, ID = 0.3 A)
(VGS = 10 V, ID = 1.0 A)
rDS(on)
–
–
3.3
1.2
Forward Transconductance (Note 1.)
(VDS = 10 V, ID = 0.5 A)
DYNAMIC CHARACTERISTICS
gfs
200
–
mS
Input Capacitance
(VDS = 15 Vdc, VGS = 0,
f = 1.0 MHz)
Ciss
Coss
Crss
–
100
pF
Output Capacitance
–
95
pF
Reverse Transfer Capacitance
–
25
pF
SWITCHING CHARACTERISTICS
Turn–On Time
(VDD = 25 Vdc, ID = 1.0 A,
(VDD 25 Vdc, ID 1.0 A,
RL = 24
, RG = 25
)
ton
toff
–
30
ns
Turn–Off Time
–
30
ns
1. Pulse Test; Pulse Width < 300 s, Duty Cycle
2.0%.
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