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參數(shù)資料
| 型號(hào)： | VN05H011Y |
| 英文描述： | Single Peripheral Driver |
| 中文描述： | 單外設(shè)驅(qū)動(dòng) |
| 文件頁數(shù)： | 5/10頁 |
| 文件大小： | 82K |
| 代理商： | VN05H011Y |
ELECTRICAL CHARACTERISTICS (Continued)
PROTECTION AND DIAGNOSTICS
Symb ol
Parameter
Test Con ditio ns
Mi n.
Typ.
Max.
Un it
VSTAT (
) Status Voltage Output
Low
ISTAT =1.6 mA
0. 4
v
VUSD
Under Voltage Shut
Down
5. 5
V
VSCL (
)Status Clamp Voltage
ISTAT =10 mA
ISTAT =-10 mA
6
-0.7
V
IOV
Over Current
RLOAD <10 m
20
A
IAV
Average Current in
Short Circuit
RLOAD <10 m
Tc =85
oC
1.4
A
IOL
Open Load Current
Level
5
180
mA
TTSD
Termal Shut-Down
Temperature
140
oC
TR
Reset T emperature
125
oC
(*) The VIH is internally clamped at 6V about. it is possible to connect thispin to an higher voltag e via an external resistor calculated to not
exceed 10 mA at the input pin.
(
) Status determinaion > 100 s after the switching edge.
Note 1: Above VCC = 36V the output voltage is clamped to 36V. Power dissipation increases and the device turns off it junction temperature
reaches thermal shutdown temperature.
FUNCTIONAL DESCRIPTION
The device has a diagnostic output which
indicates open
circuit
(no
load)
and
over
temperature conditions. The output signals are
processed by internal logic.
To protect the device against short circuit and
over-current condition the thermal protection turns
the integrated Power MOS off at a minimum
junction temperature of 140
oC. When the
temperature returns to about 125
oC the switch is
automatically turned on again. To ensur the
protection in all VCC conditions and in all the
junction temperature range it is necessary to limit
the voltage drop across Drain and Source (pin 3
and 5) at 29 V. The device is able to withstand a
load dump according the test pulse 5 at level III of
the ISO TR/1 7631.
Above VCC = 36V the output voltage is clamped
to 36V. Power dissipation increases and the
device turns off if junction temperature reaches
thermal shutdown temperature.
PROTECTING
THE
DEVICE
AGAINST
REVERSE BATTERY
The simplest way to protect the device against a
continuous reverse battery voltage (-26V) is to
insert a Schottky diode between pin 1 (GND) and
ground, as shown in the typical application circuit
(fig. 3).
The consequences of the voltage drop across this
diode are as follows:
- If the input is pulled to power GND, a negative
voltage of -VF is seen by the device. (VIL,VIH
thresholds and VSTAT are increased by VF with
respect to power GND).
- The undervoltage shutdown level is increased
by VF.
If there is no need for the control unit to handle
external analog signals referred to the power
GND, the best approach is to connect the
reference potential of the control unit to node [1]
(see application circuit infig. 4), which becomes
the common signal GND for the whole control
board.
In this way no shift of VIH,VIL and VSTAT takes
place and no negative voltage appears on the
INPUT pin; this solution allows the use of a
standard diode, with a breakdown voltage able to
handle any ISO normalized negative pulses that
occours in the automotive environment.
VN05H
4/10
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| VN05HSP | 功能描述:功率驅(qū)動(dòng)器IC RO 511-VN05N 5/04 RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| VN05N | 功能描述:功率驅(qū)動(dòng)器IC High Side for SSR RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| VN05N(011Y) | 功能描述:功率驅(qū)動(dòng)器IC High Side for SSR RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| VN05N(012Y) | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:HIGH SIDE SMART POWER SOLID STATE RELAY |
| VN05N | 制造商:STMicroelectronics 功能描述:MOSFET SMART SWITCH TO-220-5 |
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