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參數(shù)資料
| 型號： | VN05N011Y |
| 英文描述： | PERIPHERAL DRIVER|1 DRIVER|BIPOLAR/MOS|ZIP|5PIN|PLASTIC |
| 中文描述： | 外圍設(shè)備驅(qū)動程序| 1驅(qū)動器|雙極/馬鞍山|郵政編碼| 5PIN |塑料 |
| 文件頁數(shù)： | 6/11頁 |
| 文件大?。?/td> | 194K |
| 代理商： | VN05N011Y |
ELECTRICAL CHARACTERISTICS (continued)
PROTECTION AND DIAGNOSTICS (continued)
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
VSCL (
) Status Clamp Voltage
ISTAT =10 mA
ISTAT =-10 mA
6
-0. 7
V
tSC
Switch-off Time in
Short Circuit Condition
at Start-Up
RLOA D <10 m
Tc =25
oC
1.55ms
IOV
Over Current
RLOA D <10 m
-40
≤ Tc ≤ 125 oC60
A
IAV
Average Current in
Short Circuit
RLOAD <10 m
Tc =85
oC1.4
A
IOL
Open Load Current
Level
5
180
mA
TTSD
Thermal Shut-down
Temperature
140
oC
TR
Reset Temperature
125
oC
(*) The VIH is internally cl amped at 6V about. It is possibl e to connect this pin to an higher voltage via an external resi stor
cal culated to not exceed 10 mA at the i nput pin.
(
) Status determination > 100 s after the switching edge.
FUNCTIONAL DESCRIPTION
The device has a diagnostic output which
indicates
open
circuit
(no
load)
and
over
temperature conditions. The output signals are
processed by internal logic.
To protect the device against short circuit and
over-current condition, the thermal protection
turns the integrated Power MOS off at a minimum
junction temperature of 140
oC. When the
temperature returns to about 125
oC the switch is
automatically turned on again.
In short circuit conditions the protection reacts
with virtually no delay, the sensor being located in
the region of the die where the heat is generated.
PROTECTING THE DEVICE AGAINST REVER-
SE BATTERY
The simplest way to protect the device against a
continuous reverse battery voltage (-26V) is to
insert a Schottky diode between pin 1 (GND) and
ground, as shown in the typical application circuit
(fig. 3).
The consequences of the voltage drop across
this diode are as follows:
– If the input is pulled to power GND, a negative
voltage of -VF is seen by the device. (VIL,VIH
thresholds and VSTAT are increased by VF with
respect to power GND).
– The undervoltage shutdown level is increased
by VF.
If there is no need for the control unit to handle
external analog signals referred to the power
GND, the best approach is to connect the
reference potential of the control unit to node [1]
(see application circuit in fig. 4), which becomes
the common signal GND for the whole control
board.
In this way no shift of VIH,VIL and VSTAT takes
place and no negative voltage appears on the
INPUT pin; this solution allows the use of a
standard diode, with a breakdown voltage able to
handle any ISO normalized negative pulses that
occours in the automotive environment.
VN05N
4/11
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| VN05N012Y | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:PERIPHERAL DRIVER|1 DRIVER|BIPOLAR/MOS|SIP|5PIN|PLASTIC |
| VN05N-E | 功能描述:固態(tài)繼電器-PCB安裝 HI SIDE SMART PWR SOLID STATE RELAY RoHS:否 制造商:Omron Electronics 控制電壓范圍: 負載電壓額定值:40 V 負載電流額定值:120 mA 觸點形式:1 Form A (SPST-NO) 輸出設(shè)備:MOSFET 封裝 / 箱體:USOP-4 安裝風(fēng)格:SMD/SMT |
| VN05NSP | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:HIGH SIDE SMART POWER SOLID STATE RELAY |
| VN06 | 功能描述:電源開關(guān) IC - 配電 High Side for SSR RoHS:否 制造商:Exar 輸出端數(shù)量:1 開啟電阻（最大值）:85 mOhms 開啟時間（最大值）:400 us 關(guān)閉時間（最大值）:20 us 工作電源電壓:3.2 V to 6.5 V 電源電流（最大值）: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23-5 |
| VN06 026 0001 | 制造商:Amphenol Corporation 功能描述: |
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