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參數(shù)資料
| 型號： | VN0606 |
| 廠商： | ELAN Microelctronics Corp . |
| 英文描述： | N-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓60V,N溝道增強型垂直DMOS結(jié)構(gòu)場效應(yīng)管) |
| 中文描述： | N溝道增強型場效應(yīng)管垂直的DMOS（擊穿電壓60V的，?溝道增強型垂直的DMOS結(jié)構(gòu)場效應(yīng)管） |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 21K |
| 代理商： | VN0606 |
7-170
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BV
DSS
Drain-to-Source
Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage
Zero Gate Voltage Drain Current
60
V
V
GS
= 0V, I
D
= 10
μ
A
V
GS(th)
I
GSS
I
DSS
0.8
2.0
100
10
V
nA
μ
A
V
GS
=
±
30V, V
DS
= 0V
V
GS
= 0V, V
DS
= 50V
V
GS
= 0V, V
DS
= 50V,
T
A
= 125
°
C
V
GS
= 10V, V
DS
= 10V
V
GS
= 10V, I
D
= 1A
500
I
D(ON)
R
DS(ON)
ON-State Drain Current
Static Drain-to-Source
ON-State Resistance
Forward Transconductance
Input Capacitance
1.5
A
3.0
G
FS
C
ISS
170
m
V
DS
= 10V, I
D
= 0.5A
50
C
OSS
Common Source Output Capacitance
25
pF
V
GS
= 0V, V
DS
= 25V
f = 1 MHz
C
RSS
Reverse Transfer Capacitance
5
t
(ON)
Turn-ON Time
10
V
DD
= 25V, I
D
= 0.6A,
R
GEN
= 25
ns
t
(OFF)
Turn-OFF Time
10
V
SD
Diode Forward Voltage Drop
0.85
V
V
GS
= 0V, I
SD
= 0.47A
Notes:
1. All D.C. parameters 100% tested at 25
°
C unless otherwise stated. (Pulse test: 300
μ
s pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Thermal Characteristics
Package
I
D
(continuous)*
VN0606
Electrical Characteristics
(@ 25
°
C unless otherwise specified)
Switching Waveforms and Test Circuit
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
10V
V
DD
R
gen
0V
0V
I
D
(pulsed)
Power Dissipation
@ T
C
= 25
°
C
1W
θ
jc
°
C/W
125
θ
ja
°
C/W
170
I
DR
*
I
DRM
TO-92
0.33A
1.6A
0.33A
1.6A
*
I
D
(continuous) is limited by max rated T
j
.
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| VN0606 | N-Channel Enhancement-Mode Vertical DMOS FETs |
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| VN0635 | N-Channel Enhancement-Mode Vertical DMOS FETs |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| VN0606L | 功能描述:MOSFET 60V 0.33A 0.8W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| VN0606L-G | 功能描述:MOSFET 60V 3Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| VN0606L-G P002 | 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET |
| VN0606L-G P003 | 制造商:Supertex Inc 功能描述:Trans MOSFET N-CH 60V 0.33A 3-Pin TO-92 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET |
| VN0606L-G P005 | 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET |
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