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參數(shù)資料
| 型號： | VN0606L |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 60-V (D-S) MOSFETs |
| 中文描述： | N通道60 - V（下局副局長）的MOSFET |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 53K |
| 代理商： | VN0606L |
TN0601L, VN0606L, VN66AFD
Vishay Siliconix
www.vishay.com
11-2
Document Number: 70201
S-04279
—
Rev. E, 16-Jul-01
Limits
TN0601L
VN0606L
VN66AFD
Parameter
Symbol
Test Conditions
Typ
a
Min
Max
Min
Max
Min
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 10 A
70
60
60
60
V
DS
= V
GS
, I
D
= 0.25 mA
1.6
0.5
2
V
Gate-Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 1 mA
1.7
0.8
2
0.8
2.5
V
DS
= 0 V, V
GS
=
30 V
100
100
Gate-Body Leakage
I
GSS
T
C
= 125 C
500
nA
V
DS
= 0 V, V
GS
=
20 V
10
V
DS
= 60 V, V
GS
= 0 V
10
T
J
= 125 C
500
Zero Gate VoltageDrain Current
I
DSS
V
DS
= 48 V, V
GS
= 0 V
1
1
A
T
J
= 125 C
100
T
C
= 125 C
10
V
DS
= 10 V, V
GS
= 4.5 V
0.5
0.25
On-State Drain Current
b
I
D(on)
V
DS
= 10 V, V
GS
= 10 V
2.4
1
1.5
1.5
A
V
GS
= 3.5 V, I
D
= 0.04 A
4
5
V
GS
= 4.5 V, I
D
= 0.25 A
2
3
T
J
= 125 C
3.8
6
V
GS
= 5 V, I
D
= 0.3 A
2.3
5
Drain-Source On-Resistance
b
r
DS(on)
V
GS
= 10 V, I
D
= 0.5 A
1.2
3
T
J
= 125 C
2.3
6
V
GS
= 10 V, I
D
= 1 A
1.3
1.8
3
T
C
= 125 C
2.5
6
Forward Transconductance
b
g
fs
V
DS
= 10 V, I
D
= 0.5 A
350
200
170
170
Common Source Output Conductance
b
g
os
V
DS
= 10 V, I
D
= 0.1 A
0.3
mS
Dynamic
Input Capacitance
C
iss
35
60
50
50
Output Capacitance
C
oss
V
DS
= 25 V, V
= 0 V,
f = 1 MHz
25
50
40
40
pF
Reverse Transfer Capacitance
C
rss
6
10
10
10
Switching
c
Turn-On Time
t
ON
V
DD
= 25 V, R
L
= 23
I
D
1 A, V
= 10 V
R
G
= 25
8
15
10
15
Turn-Off Time
t
OFF
9
15
10
15
ns
Notes
a.
b.
c.
For DESIGN AID ONLY, not subject to production testing..
Pulse test: PW
300 s duty cycle
Switching time is essentially independent of operating temperature.
VNDQ06
2%.
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