參數(shù)資料
型號: VN0645
廠商: Supertex, Inc.
英文描述: N-Channel Enhancement-Mode Vertical DMOS FETs
中文描述: N溝道增強(qiáng)型場效應(yīng)管垂直的DMOS
文件頁數(shù): 2/4頁
文件大小: 30K
代理商: VN0645
7-176
VN0645/VN0650
Package
I
D
(continuous)*
I
D
(pulsed)
Power Dissipation
@ T
C
= 25
°
C
6W
1W
θ
jc
°
C/W
21
125
θ
ja
°
C/W
125
170
I
DR
*
I
DRM
TO-39
TO-92
*
I
D
(continuous) is limited by max rated T
j
.
0.4A
0.2A
1.5A
1.0A
0.4A
0.2A
1.5A
1.0A
Thermal Characteristics
Symbol
BV
DSS
Parameter
Drain-to-Source
Breakdown Voltage
Min
500
450
Typ
Max
Unit
Conditions
VN0650
VN0645
V
GS(th)
V
GS(th)
I
GSS
I
DSS
Gate Threshold Voltage
Change in V
GS(th)
with Temperature
Gate Body Leakage
Zero Gate Voltage Drain Current
2
4
V
V
GS
= V
DS
, I
D
= 2mA
V
GS
= V
DS
, I
D
= 2mA
V
GS
=
±
20V, V
DS
= 0V
V
GS
= 0V, V
DS
= Max Rating
V
GS
= 0V, V
DS
= 0.8 Max Rating
T
A
= 125
°
C
V
GS
= 5V, V
DS
= 25V
V
GS
= 10V, V
DS
= 25V
V
GS
= 5V, I
D
= 100mA
V
GS
= 10V, I
D
= 400mA
V
GS
= 10V, I
D
= 400mA
V
DS
= 25V, I
D
= 400mA
-4.5
100
10
mV/
°
C
nA
μ
A
mA
1
I
D(ON)
ON-State Drain Current
0.8
1.1
12
11
0.5
R
DS(ON)
16
R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Notes:
1. All D.C. parameters 100% tested at 25
°
C unless otherwise stated. (Pulse test: 300
μ
s pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Change in R
DS(ON)
with Temperature
Forward Transconductance
Input Capacitance
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage Drop
Reverse Recovery Time
0.75
%/
°
C
m
100
120
20
10
130
75
20
10
10
20
10
1.8
pF
V
ns
V
GS
= 0V, I
SD
= 0.4A
V
GS
= 0V, I
SD
= 0.4A
300
Electrical Characteristics
(@ 25
°
C unless otherwise specified)
Static Drain-to-Source
ON-State Resistance
A
V
V
GS
= 0V, I
D
= 2mA
ns
V
GS
= 0V, V
DS
= 25V
f = 1 MHz
V
DD
= 25V,
I
D
= 0.5A,
R
GEN
= 25
Switching Waveforms and Test Circuit
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
10V
V
DD
R
gen
0V
0V
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