- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄359398 > VN0808 (ELAN Microelctronics Corp .) N-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓80V,N溝道增強(qiáng)型垂直DMOS結(jié)構(gòu)場(chǎng)效應(yīng)管) PDF資料下載
參數(shù)資料
| 型號(hào)： | VN0808 |
| 廠商： | ELAN Microelctronics Corp . |
| 英文描述： | N-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓80V,N溝道增強(qiáng)型垂直DMOS結(jié)構(gòu)場(chǎng)效應(yīng)管) |
| 中文描述： | N溝道增強(qiáng)型場(chǎng)效應(yīng)管垂直的DMOS（擊穿電壓80V的，?溝道增強(qiáng)型垂直的DMOS結(jié)構(gòu)場(chǎng)效應(yīng)管） |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 20K |
| 代理商： | VN0808 |
7-184
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BV
DSS
V
GS(th)
I
GSS
I
DSS
Drain-to-Source Breakdown Voltage
80
V
I
D
= 10
μ
A, V
GS
= 0V
V
GS
= V
DS
, I
D
= 1mA
V
GS
=
±
15V, V
DS
= 0V
V
GS
= 0V, V
DS
= 80V
V
GS
= 0V, V
DS
= 0.8 x Max Rating
T
A
= 125
°
C
V
GS
= 10V, V
DS
= 10V
V
GS
= 10V, I
D
= 1A
V
DS
= 10V, I
D
= 0.5A
Gate Threshold Voltage
0.8
2.0
V
Gate Body Leakage
100
nA
Zero Gate Voltage Drain Current
10
μ
A
500
I
D(ON)
R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
(ON)
t
(OFF)
V
SD
ON-State Drain Current
1.5
A
Static Drain-to-Source ON-State Resistance
4.0
Forward Transconductance
170
m
Input Capacitance
50
Common Source Output Capacitance
40
pF
Reverse Transfer Capacitance
10
Turn-ON Time
10
Turn-OFF Time
10
Diode Forward Voltage Drop
0.85
V
I
SD
= 0.35A, V
GS
= 0V
Notes:
1. All D.C. parameters 100% tested at 25
°
C unless otherwise stated. (Pulse test: 300
μ
s pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
VN0808
Thermal Characteristics
Package
I
D
(continuous)*
Electrical Characteristics
(@ 25
°
C unless otherwise specified)
ns
V
DD
= 25V, I
D
= 1A
R
GEN
= 25
V
GS
= 0V, V
DS
= 25V
f = 1 MHz
Switching Waveforms and Test Circuit
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
10V
V
DD
R
gen
0V
0V
I
D
(pulsed)
Power Dissipation
@ T
C
= 25
°
C
1W
θ
jc
°
C/W
125
θ
ja
°
C/W
170
I
DR
*
I
DRM
TO-92
0.3A
1.9A
0.3A
1.9A
*
I
D
(continuous) is limited by max rated T
j
.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| VN0808 | N-Channel Enhancement-Mode Vertical DMOS FETs |
| VN0808L | N-Channel Enhancement-Mode Vertical DMOS FETs |
| VN101501 | Magnetically activated digital vane switch in a rugged, overmolded plastic housing with three pins or 3-wire harness |
| VN1025CC | Sample/Track-and-Hold Amplifier |
| VN1025CI | Sample/Track-and-Hold Amplifier |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| VN0808L | 功能描述:MOSFET 80V 0.3A 0.8W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| VN0808L-G | 功能描述:MOSFET 80V 4Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| VN0808L-G P002 | 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET |
| VN0808L-G P003 | 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET |
| VN0808L-G P005 | 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。