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參數(shù)資料
| 型號： | VN0808LS |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 80- and 90-V (D-S) MOSFETs |
| 中文描述： | N溝道80 -和90 - V（下局副局長）的MOSFET |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 52K |
| 代理商： | VN0808LS |
VN0808L/LS, VQ1006P
Vishay Siliconix
Document Number: 70214
S-04279—Rev.D, 16-Jul-01
www.vishay.com
11-1
N-Channel 80- and 90-V (D-S) MOSFETs
Part Number
V
(BR)DSS
Min (V)
r
DS(on)
Max ( )
V
GS(th)
(V)
I
D
(A)
VN0808L
4 @ V
GS
= 10 V
4 @ V
GS
= 10 V
0.8 to 2
0.3
VN0808LS
80
0.8 to
2
0.33
VQ1006P
90
4 @ V
GS
= 10 V
0.8 to 2.5
0.4
Low On-Resistance: 3.6
Low Threshold: 1.6 V
Low Input Capacitance: 35 pF
Fast Switching Speed: 6 ns
Low Input and Output Leakage
Low Offset Voltage
Low-Voltage Operation
Easily Driven Without Buffer
High-Speed Circuits
Low Error Voltage
Direct Logic-Level Interface: TTL/CMOS
Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
Battery Operated Systems
Solid-State Relays
TO-226AA
(TO-92)
Top View
S
D
G
1
2
3
TO-92S
Top View
VN0808LS
Front View:
S
D
G
1
2
3
Sidebraze: VQ1006P
Top View:
VN0808L
1
2
3
4
5
6
7
14
13
12
11
10
9
8
Top View
Dual-In-Line
D
1
D
4
S
1
S
4
G
1
G
4
NC
NC
G
2
G
3
S
2
S
3
D
2
D
3
N
N
N
N
VN0808L
“S” VN
0808L
xxyy
Front View:
“S” = Siliconix Logo
f
= Factory Code
ll
= Lot Traceability
xxyy
= Date Code
VQ1006P
VQ1006P
“S”
f//xxyy
VN0808LS
“S” VN
0808LS
xxyy
VQ1006P
Parameter
Symbol
VN0808L
VN0808LS
Single
Total Quad
Unit
Drain-Source Voltage
V
DS
V
GS
80
80
90
Gate-Source Voltage
30
30
20
V
Continuous Drain Current
(T
J
= 150 C)
T
A
= 25 C
T
A
= 100 C
0.3
0.33
0.4
I
D
0.19
0.21
0.23
A
Pulsed Drain Current
a
I
DM
1.9
1.9
2
T
A
= 25 C
T
A
= 100 C
0.8
0.9
1.3
2
Power Dissipation
P
D
0.32
0.4
0.52
0.8
W
Thermal Resistance, Junction-to-Ambient
R
thJA
T
J
, T
stg
156
139
96
62.5
C/W
Operating Junction and Storage Temperature Range
–55 to 150
C
Notes
a.
Pulse width limited by maximum junction temperature.
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| VN0808LS-TR1 | 制造商:Vishay Angstrohm 功能描述:Trans MOSFET N-CH 80V 0.33A 3-Pin TO-92S T/R |
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