- 您現在的位置：買賣IC網 > PDF目錄359399 > VN1206L (Vishay Intertechnology,Inc.) N-Channel Enhancement-Mode MOSFET Transistor(最小漏源擊穿電壓120V,夾斷電流0.23A的N溝道增強型MOSFET晶體管) PDF資料下載
參數資料
| 型號： | VN1206L |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel Enhancement-Mode MOSFET Transistor(最小漏源擊穿電壓120V,夾斷電流0.23A的N溝道增強型MOSFET晶體管) |
| 中文描述： | N溝道增強型MOSFET晶體管（最小漏源擊穿電壓120伏特，夾斷電流0.23A的N溝道增強型MOSFET的晶體管） |
| 文件頁數： | 2/4頁 |
| 文件大?。?/td> | 74K |
| 代理商： | VN1206L |
VN1206L
Vishay Siliconix
www.siliconix.com FaxBack 408-970-5600
11-2
Document Number: 70227
S-00591—Rev. D, 03-Apr-99
Limits
Typ
a
Parameter
Symbol
Test Conditions
Min
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 100 A
120
145
V
Gate Threshold Voltage
Gate-Threshold Voltage
GS( h)
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
1.4
V
DS
= V
GS
, I
D
= 1 mA
0.8
1.5
2
Gate-Body Leakage
B d L
I
GSS
V
DS
= 0 V, V
GS
=
15 V
100
T
J
= 125 C
500
nA
V
DS
= 0 V, V
GS
=
20 V
Zero Gate Voltage Drain Current
V l
D i C
I
DSS
V
DS
= 96 V, V
GS
= 0 V
A
T
J
= 125 C
V
DS
= 120 V, V
GS
= 0 V
10
T
J
= 125 C
500
On-State Drain Current
b
I
D(on)
V
DS
= 10 V, V
GS
= 4.5 V
0.6
A
V
DS
= 10 V, V
GS
= 10 V
1
1.6
D i S
Drain-Source On-Resistance
O R
O R
O R
b
V
GS
= 2.5 V, I
D
= 0.1 A
6
10
V
GS
= 3.5 V, I
D
= 0.1 A
4.5
V
GS
= 10 V, I
D
= 0.3 A
3.3
r
DS(on)
V
GS
= 4.5 V, I
D
= 0.2 A
3.8
T
J
= 125 C
7.6
V
GS
= 10 V, I
D
= 0.5 A
3.3
6
T
J
= 125 C
7
14.8
Forward Transconductance
b
g
fs
V
DS
= 10 V, I
D
= 0.2 A
400
V
DS
= 10 V, I
D
= 0.5 A
300
425
mS
Common Source Output Conductance
b
g
os
V
DS
= 7.5 V, I
D
= 0.1 A
0.4
Dynamic
Input Capacitance
C
iss
V
DS
= 25 V V
= 0 V
f = 1 MHz
f 1 MHz
35
125
Output Capacitance
C
oss
15
50
pF
Reverse Transfer Capacitance
C
rss
2
20
Switching
c
Turn-On Time
O Ti
t
ON
V
DD
= 60 V, R
L
= 150
I
D
0.4 A, V
= 10 V
R
G
= 25
60 V R
60 V R
6
t
d(on)
3
8
t
r
3
8
ns
Turn-Off Time
t
OFF
10
t
d(off)
7
18
t
f
2.5
12
Notes
a.
b.
c.
For DESIGN AID ONLY, not subject to production testing..
Pulse test: PW
300 s duty cycle
Switching time is essentially independent of operating temperature.
VNDQ12
2%.
相關PDF資料 |
PDF描述 |
|---|---|
| VN1206 | N-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓120V,N溝道增強型垂直DMOS結構場效應管) |
| VN1210M | TRANSISTOR | MOSFET | N-CHANNEL | 120V V(BR)DSS | 250MA I(D) | TO-237 |
| VN1206M | TRANSISTOR | MOSFET | N-CHANNEL | 120V V(BR)DSS | 330MA I(D) | TO-237 |
| VN121SP | |
| VN1216N1 | N-Channel Enhancement-Mode Vertical DMOS Power FETs |
相關代理商/技術參數 |
參數描述 |
|---|---|
| VN1206L-G | 功能描述:MOSFET 120V 6Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| VN1206L-G P002 | 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET |
| VN1206L-G P003 | 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET |
| VN1206L-G P005 | 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET |
| VN1206L-G P013 | 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET |
發(fā)布緊急采購，3分鐘左右您將得到回復。