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參數(shù)資料
| 型號(hào)： | VN1310 |
| 廠商： | ELAN Microelctronics Corp . |
| 英文描述： | N-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓100V,N溝道增強(qiáng)型垂直DMOS結(jié)構(gòu)場(chǎng)效應(yīng)管) |
| 中文描述： | N溝道增強(qiáng)型場(chǎng)效應(yīng)管垂直的DMOS（擊穿電壓100V的，?溝道增強(qiáng)型垂直的DMOS結(jié)構(gòu)場(chǎng)效應(yīng)管） |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 28K |
| 代理商： | VN1310 |
7-191
7
VN1304
VN1306
VN1310
N-Channel Enhancement-Mode
Vertical DMOS FETs
BV
DSS
/
BV
DGS
40V
R
DS(ON)
(max)
I
D(ON)
(min)
Order Number / Package
TO-39
TO-92
8.0
8.0
8.0
0.5A
—
—
60V
0.5A
VN1306N2
—
100V
0.5A
—
VN1310N3
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Note: See Package Outline section for dimensions.
Package Options
Features
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C
ISS
and fast switching speeds
Excellent thermal stability
Integral Source-Drain diode
High input impedance and high gain
Complementary N- and P-channel devices
Applications
Motor controls
Converters
Amplifiers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
Absolute Maximum Ratings
Drain-to-Source Voltage
BV
DSS
BV
DGS
±
20V
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
-55
°
C to +150
°
C
Soldering Temperature*
300
°
C
* Distance of 1.6 mm from case for 10 seconds.
S G D
TO-92
D G S
TO-39
Ordering Information
Case: DRAIN
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| VN1316N2 | N-Channel Enhancement-Mode Vertical DMOS Power FETs |
| VN1316N3 | N-Channel Enhancement-Mode Vertical DMOS Power FETs |
| VN1504 | N-Channel Enhancement-Mode Vertical DMOS FET |
| VN1550NW | N-Channel Enhancement-Mode Vertical DMOS FETs |
| VN1550 | N-Channel Enhancement-Mode Vertical DMOS FETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| VN1310N3 | 制造商:SUPERTEX 制造商全稱:SUPERTEX 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | TO-92 |
| VN1310N8 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | TO-243AA |
| VN1316N2 | 制造商:SUPERTEX 制造商全稱:SUPERTEX 功能描述:N-Channel Enhancement-Mode Vertical DMOS Power FETs |
| VN1316N3 | 制造商:SUPERTEX 制造商全稱:SUPERTEX 功能描述:N-Channel Enhancement-Mode Vertical DMOS Power FETs |
| VN1319A3R | 制造商:SHIELD 制造商全稱:SHIELD s.r.l. 功能描述:For electrovalves, style C-ind, 2p or 3p+G, female, field attachable |
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