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參數(shù)資料
| 型號： | VN771P |
| 廠商： | 意法半導體 |
| 英文描述： | Quad Smart Power Solid State Relay For Complete H-Bridge Configurations(應用于完整H橋結構的四路智能功率固態(tài)繼電器) |
| 中文描述： | 四智能功率固態(tài)繼電器完整的H -橋配置（應用于完整?橋結構的四路智能功率固態(tài)繼電器） |
| 文件頁數(shù)： | 8/11頁 |
| 文件大?。?/td> | 95K |
| 代理商： | VN771P |
SWITCHING (**)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
t
d(off)
t
f
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V
DD
= 15 V
V
gen
= 10 V
(see figure 3)
I
d
= 10 A
R
gen
= 10
100
330
400
155
200
600
700
300
ns
ns
ns
ns
t
d(on)
t
r
t
d(off)
t
f
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V
DD
= 15 V
V
gen
= 10 V
(see figure 3)
I
d
= 10 A
R
gen
= 1000
450
1.7
7.5
3.4
700
3
10
5
ns
μ
s
μ
s
μ
s
A/
μ
s
(di/dt)
on
Turn-on Current Slope
V
DD
= 15 V
V
in
= 10 V
V
DD
= 12 V
I
D
= 10 A
R
gen
= 10
I
D
= 10 A
35
Q
i
Total Input Charge
V
in
= 10 V
60
nC
SOURCEDRAIN DIODE
Symbol
V
SD
(
)
t
rr
(
)
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Forward On Voltage
I
SD
= 10 A
V
in
= 0
di/dt = 100 A/
μ
s
T
j
= 25
C
1.6
V
Q
rr
(
)
I
RRM
(
)
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 10 A
V
DD
= 30 V
(see test circuit, figure 5)
180
0.45
7
ns
μ
C
A
PROTECTION
Symbol
T
jsh
(
)
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
o
C
Overtemperature
Shutdown
Overtemperature Reset
150
T
jrs
(
)
I
gf
(
)
135
o
C
Fault Sink Current
V
in
= 10 V
V
in
= 5 V
V
DS
= 13 V
V
DS
= 13 V
50
20
mA
mA
I
lim
Drain Current Limit
V
in
= 10 V
V
in
= 5 V
V
in
= 10 V
V
in
= 5 V
starting T
j
= 25
o
C
V
in
= 10 V
R
gen
= 1K
V
DS
= 13 V
V
DS
= 13 V
20
20
28
28
40
40
A
A
μ
s
μ
s
J
t
dlim
(
)
Step Response
Current Limit
25
70
40
120
E
as
(
)
Single Pulse Avalance
Energy
V
DD
= 20 V
L = 10 mH
2.5
(
) Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %
(
) Parametersguaranteed by design/characterization
ELECTRICAL CHARACTERISTICS FOR LOW SIDE SWITCHES
(continued)
VN771P
8/11
相關PDF資料 |
PDF描述 |
|---|---|
| VN771 | Quad Smart Power Solid State Relay For Complete H-Bridge Configurations(應用于完整H橋結構的四路智能功率固態(tài)繼電器) |
| VN772 | QUAD SMART POWER SOLID STATE RELAY FOR COMPLETE H BRIDGE CONFIGURATIONS |
| VN772K | QUAD SMART POWER SOLID STATE RELAY FOR COMPLETE H BRIDGE CONFIGURATIONS |
| VN800PT | HIGH SIDE DRIVER |
| VN800S | HIGH SIDE DRIVER |
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|---|---|
| VN771P13TR | 制造商:STMicroelectronics 功能描述:QUD HSD 0.135 OH - Tape and Reel |
| VN772 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:QUAD SMART POWER SOLID STATE RELAY FOR COMPLETE H BRIDGE CONFIGURATIONS |
| VN772K | 功能描述:電源開關 IC - 配電 Quad 40V 9A Hi-Side RoHS:否 制造商:Exar 輸出端數(shù)量:1 開啟電阻（最大值）:85 mOhms 開啟時間（最大值）:400 us 關閉時間（最大值）:20 us 工作電源電壓:3.2 V to 6.5 V 電源電流（最大值）: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-23-5 |
| VN772K13TR | 功能描述:功率驅(qū)動器IC Quad 40V 9A Hi-Side RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| VN772K-E | 功能描述:電源開關 IC - 配電 36V, 9A Quad smart RoHS:否 制造商:Exar 輸出端數(shù)量:1 開啟電阻（最大值）:85 mOhms 開啟時間（最大值）:400 us 關閉時間（最大值）:20 us 工作電源電壓:3.2 V to 6.5 V 電源電流（最大值）: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-23-5 |
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