參數(shù)資料
型號: VN772K
廠商: 意法半導(dǎo)體
英文描述: QUAD SMART POWER SOLID STATE RELAY FOR COMPLETE H BRIDGE CONFIGURATIONS
中文描述: 四智能功率固態(tài)繼電器H橋的完整配置
文件頁數(shù): 7/21頁
文件大?。?/td> 305K
代理商: VN772K
7/21
VN772K
ELECTRICAL CHARACTERISTICS
FOR LOW SIDE SWITCHES
(-40°C < T
j
< 150°C, unless otherwise specified)
OFF
ON
(T
j
=25°C, unless otherwise specified)
DYNAMIC
SWITCHING
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
V
CLAMP
Drain-source Clamp
Voltage
Drain-source Clamp
Threshold Voltage
Input Threshold Voltage
Supply Current from Input
Pin
Input-Source Clamp
Voltage
V
IN
=0V; I
D
=3.5A
40
45
55
V
V
CLTH
V
IN
=0V; I
D
=2mA
36
V
V
INTH
V
DS
=V
IN
; I
D
=1mA
0.5
2.5
V
I
ISS
V
DS
=0V; V
IN
=5V
100
150
μ
A
V
INCL
I
IN
=1mA
I
IN
=-1mA
V
DS
=13V; V
IN
=0V; T
j
=25°C
V
DS
=25V; V
IN
=0V
6
-1.0
6.8
8
-0.3
30
75
V
I
DSS
Zero Input Voltage Drain
Current (V
IN
=0V)
μ
A
Symbol
Parameter
Test Conditions
Min
Typ
Max
60
120
Unit
R
DS(on)
Static Drain-source On
Resistance
V
IN
=5V; I
D
=3.5A; T
j
=25°C
V
IN
=5V; I
D
=3.5A
m
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
g
fs
(*)
Forward
Transconductance
Output Capacitance
V
DD
=13V; I
D
=3.5A
9
S
C
OSS
V
DS
=13V; f=1MHz; V
IN
=0V
220
pF
Symbol
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
Parameter
Test Conditions
Min
Typ
100
470
500
350
0.75
4.6
5.4
3.6
Max
300
1500
1500
1000
2.3
14.0
16.0
11.0
Unit
ns
ns
ns
ns
μ
s
μ
s
μ
s
μ
s
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V
DD
=15V; I
D
=3.5A
V
gen
=5V; R
gen
=R
IN MIN
=150
V
DD
=15V; I
D
=3.5A
V
gen
=5V; R
gen
=2.2K
(dI/dt)
on
Turn-on Current Slope
V
DD
=15V; I
D
=3.5A
V
gen
=5V; R
gen
=R
IN MIN
=150
V
DD
=12V; I
D
=3.5A; V
IN
=5V
I
gen
=2.13mA
6.5
A/
μ
s
Q
i
Total Input Charge
18
nC
Symbol
V
SD
(*)
t
rr
Q
rr
I
RRM
Parameter
Test Conditions
Min
Typ
0.8
220
0.28
2.5
Max
Unit
V
ns
μ
C
A
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
=3.5A; V
IN
=0V
I
SD
=3.5A; dI/dt=20A/
μ
s
V
DD
=30V; L=200
μ
H
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