參數(shù)資料
型號: VN88AFD
廠商: Vishay Intertechnology,Inc.
英文描述: N-Channel 80-V and 90-V (D-S) MOSFETS
中文描述: N通道80 - V和90 - V(下局副局長)的MOSFET
文件頁數(shù): 1/4頁
文件大?。?/td> 46K
代理商: VN88AFD
Vishay Siliconix
2N6661/VN88AFD
Document Number: 70224
S-04279—Rev. C, 16-Jul-01
www.vishay.com
11-1
N-Channel 80-V and 90-V (D-S) MOSFETS
Part Number
V
(BR)DSS
Min (V)
r
DS(on)
Max ( )
V
GS(th)
(V)
I
D
(A)
2N6661
90
4 @ V
GS
= 10 V
0.8 to 2
0.9
VN88AFD
80
4 @ V
GS
= 10 V
0.8 to 2.5
1.29
Low On-Resistance: 3.6
Low Threshold: 1.6 V
Low Input Capacitance: 35 pF
Fast Switching Speed: 6 ns
Low Input and Output Leakage
Low Offset Voltage
Low-Voltage Operation
Easily Driven Without Buffer
High-Speed Circuits
Low Error Voltage
Direct Logic-Level Interface: TTL/CMOS
Drivers: Relays, Solenoids, Lamps,
Hammers, Displays, Memories, Transistors,
etc.
Battery Operated Systems
Solid-State Relays
1
2
3
TO-205AD
(TO-39)
Top View
D
G
S
TO-220SD
(Tab-Drain)
Front View
VN88AFD
S G D
D
G
S
N-Channel MOSFET
2N6661
Device Marking
Front View
VN88AFD
“S”
xxyy
“S” = Siliconix Logo
xxyy
= Date Code
Device Marking
Side View
2N6661
“S”
fllxxyy
“S” = Siliconix Logo
f
= Factory Code
ll
= Lot Traceability
xxyy
= Date Code
Parameter
Symbol
2N6661
VN88AFD
Unit
Drain-Source Voltage
V
DS
90
80
Gate-Source Voltage
V
GS
20
30
V
T
C
= 25 C
0.9
1.29
Continuous Drain Current
(T
J
= 150 C)
T
C
= 100 C
I
D
0.7
0.81
A
Pulsed Drain Current
a
I
DM
3
3
T
C
= 25 C
6.25
15
Power Dissipation
T
C
= 100 C
P
D
2.5
6
W
Thermal Resistance, Junction-to-Ambient
b
R
thJA
170
Thermal Resistance, Junction-to-Case
R
thJC
8.3
C/W
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 150
C
Notes
a.
b.
Pulse width limited by maximum junction temperature.
This parameter not registered with JEDEC.
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