參數(shù)資料
型號: VN920SP13TR
廠商: 意法半導(dǎo)體
英文描述: 20 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor
中文描述: 單通道高壓側(cè)固態(tài)繼電器
文件頁數(shù): 6/23頁
文件大?。?/td> 497K
代理商: VN920SP13TR
6/23
VN920 / VN920-B5 / VN920SO
1
TRUTH TABLE
ELECTRICAL TRANSIENT REQUIREMENTS
CONDITIONS
INPUT
OUTPUT
SENSE
Normal operation
L
H
L
H
L
H
L
H
L
H
H
L
H
L
L
H
L
L
L
L
L
L
L
L
L
H
H
L
0
Nominal
Overtemperature
0
V
SENSEH
0
0
0
0
0
Undervoltage
Overvoltage
Short circuit to GND
(T
j
<T
TSD
) 0
(T
j
>T
TSD
) V
SENSEH
Short circuit to V
CC
0
< Nominal
0
Negative output voltage clamp
ISO T/R 7637/1
Test Pulse
TEST LEVELS
III
I
II
IV
Delays and
Impedance
2 ms 10
0.2 ms 10
0.1
μ
s 50
0.1
μ
s 50
100 ms, 0.01
400 ms, 2
1
2
-25 V
+25 V
-25 V
+25 V
-4 V
+26.5 V
-50 V
+50 V
-50 V
+50 V
-5 V
+46.5 V
-75 V
+75 V
-100 V
+75 V
-6 V
+66.5 V
-100 V
+100 V
-150 V
+100 V
-7 V
+86.5 V
3a
3b
4
5
ISO T/R 7637/1
Test Pulse
TEST LEVELS RESULTS
II
C
C
C
C
C
E
I
III
C
C
C
C
C
E
IV
C
C
C
C
C
E
1
2
C
C
C
C
C
C
3a
3b
4
5
CLASS
C
E
CONTENTS
All functions of the device are performed as designed after exposure to disturbance.
One or more functions of the device is not performed as designed after exposure to disturbance
and cannot be returned to proper operation without replacing the device.
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