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參數(shù)資料
| 型號： | VN920SP |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | INDUCTOR, AXIAL, 6.0UH; Inductor type:Choke; Inductance:6uH; Tolerance, inductance:+/-20%; Resistance:0.19R; Current, DC max:1.5A; Frequency, resonant:84MHz; Case style:Axial; Q factor:0.19; Material, core:Ferrite; Tolerance, +:20%; RoHS Compliant: Yes |
| 中文描述： | 單通道高壓側(cè)固態(tài)繼電器 |
| 文件頁數(shù)： | 8/23頁 |
| 文件大?。?/td> | 497K |
| 代理商： | VN920SP |
8/23
VN920 / VN920-B5 / VN920SO
GND
REVERSE BATTERY
Solution 1: Resistor in the ground line (R
GND
only). This
can be used with any type of load.
The following is an indication on how to dimension the
R
GND
resistor.
1) R
GND
≤
600mV / (I
S(on)max
).
2) R
GND
≥ (
V
CC
) / (-I
GND
)
where -I
is the DC reverse ground pin current and can
be found in the absolute maximum rating section of the
device’s datasheet.
Power Dissipation in R
GND
(when V
CC
<0: during reverse
battery situations) is:
P
D
= (-V
CC
)
2
/R
GND
This resistor can be shared amongst several different
HSD. Please note that the value of this resistor should be
calculated with formula (1) where I
becomes the
sum of the maximum on-state currents of the different
devices.
Please note that if the microprocessor ground is not
common with the device ground then the R
will
produce a shift (I
* R
) in the input thresholds
and the status output values. This shift will vary
depending on how many devices are ON in the case of
several high side drivers sharing the same R
GND
.
If the calculated power dissipation leads to a large resistor
or several devices have to share the same resistor then
the ST suggests to utilize Solution 2 (see below).
Solution 2: A diode (D
GND
) in the ground line.
A resistor (R
=1k
)
should be inserted in parallel to
D
GND
if the device will be driving an inductive load.
PROTECTION
NETWORK
AGAINST
This small signal diode can be safely shared amongst
several different HSD. Also in this case, the presence of
the ground network will produce a shift (
j
600mV) in the
input threshold and the status output values if the
microprocessor ground is not common with the device
ground. This shift will not vary if more than one HSD
shares the same diode/resistor network.
LOAD DUMP PROTECTION
D
is necessary (Voltage Transient Suppressor) if the
load dump peak voltage exceeds V
max DC rating. The
same applies if the device will be subject to transients on
the V
line that are greater than the ones shown in the
ISO T/R 7637/1 table.
μ
C I/Os PROTECTION:
If a ground protection network is used and negative
transients are present on the V
line, the control pins will
be pulled negative. ST suggests to insert a resistor (R
prot
)
in line to prevent the
μ
C I/Os pins to latch-up.
The value of these resistors is a compromise between the
leakage current of
μ
C and the current required by the
HSD I/Os (Input levels compatibility) with the latch-up limit
of
μ
C I/Os.
-V
CCpeak
/I
latchup
≤
R
prot
≤
(V
OH
μ
C
-V
IH
-V
GND
) / I
IHmax
Calculation example:
For V
CCpeak
= - 100V and I
latchup
≥
20mA; V
OH
μ
C
≥
4.5V
5k
≤
R
prot
≤
65k
.
Recommended R
prot
value is 10k
.
1
APPLICATION SCHEMATIC
V
CC
GND
OUTPUT
D
GND
R
GND
D
ld
μ
C
+5V
R
prot
V
GND
INPUT
CURRENT SENSE
R
SENSE
R
prot
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| VNA-21 | AC-DC Converter, 5Watt, Input VAC: 90~260, Output VDC: 12/-12, Max Output Current(A): ??0.2, Package: Encapsulated, Isolation(VDC): 3000, Operating Temp.: -25??C to +70??C/40??C to +70??C, Low Ripple & Noise, High Efficiency up to 76%,Single & Dual Ouputs, Regulated, Switching |
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|---|---|
| VN920SP13TR | 功能描述:電源開關(guān) IC - 配電 30A 36V High Side RoHS:否 制造商:Exar 輸出端數(shù)量:1 開啟電阻（最大值）:85 mOhms 開啟時間（最大值）:400 us 關(guān)閉時間（最大值）:20 us 工作電源電壓:3.2 V to 6.5 V 電源電流（最大值）: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23-5 |
| VN920SP-E | 功能描述:功率驅(qū)動器IC 30A 36V High Side RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| VN920SPTR-E | 功能描述:功率驅(qū)動器IC 30A 36V HIGH SIDE RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| VN98AJ | 制造商:SILCONIX 功能描述:MOSFET Transistor, N-Channel, TO-3 |
| VN990P | 功能描述:功率驅(qū)動器IC VIPOWER RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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