參數(shù)資料
型號(hào): VND5025LAK-E
廠商: 意法半導(dǎo)體
英文描述: Double channel high side driver with analog current sense for automotive applications
中文描述: 雙通道模擬汽車應(yīng)用的電流檢測(cè)的高邊驅(qū)動(dòng)器
文件頁(yè)數(shù): 21/31頁(yè)
文件大?。?/td> 319K
代理商: VND5025LAK-E
VND5025LAK-E
Application information
21/31
3
Application information
Figure 26.
Application schematic
3.1
GND protection network against reverse battery
This section provides two solutions for implementing a ground protection network against
reverse battery.
3.1.1
Solution 1: Resistor in the ground line (R
GND
only)
This first solution can be used with any type of load.
The following formulas indicate how to dimension the R
GND
resistor:
1.
R
GND
600mV / (I
S(on)max
)
2.
R
GND
(-V
CC
) / (-I
GND
)
where -I
GND
is the DC reverse ground pin current and can be found in the absolute
maximum rating section of the device datasheet.
Power Dissipation in R
GND
(when V
CC
< 0 during reverse battery situations) is:
P
D
= (-V
CC
)
2
/ R
GND
This resistor can be shared among several different HSDs. Please note that the value of this
resistor is calculated with formula (1), where I
S(on)max
becomes the sum of the maximum on-
state currents of the different devices.
Please note that if the microprocessor ground is not shared by the device ground, the R
GND
produces a shift (I
S(on)max
* R
GND
) in the input thresholds and the status output values. This
shift varies depending on how many devices are ON in the case of several high-side drivers
sharing the same R
GND
.
Note: Channel 2 has the same internal circuit as channel 1.
V
CC
GND
OUTPUT
D
GND
R
GND
D
ld
μC
+5V
V
GND
CS_DIS
R
prot
R
prot
CURRENT SENSE
R
prot
R
SENSE
C
EXT
INPUT
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