- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄359405 > VND5050AJ-E (意法半導體) Double channel high side driver with analog current sense for automotive applications PDF資料下載
參數(shù)資料
| 型號： | VND5050AJ-E |
| 廠商： | 意法半導體 |
| 英文描述： | Double channel high side driver with analog current sense for automotive applications |
| 中文描述： | 雙通道模擬汽車應用的電流檢測的高邊驅動器 |
| 文件頁數(shù)： | 16/26頁 |
| 文件大?。?/td> | 717K |
| 代理商： | VND5050AJ-E |
Application information
VND5050AJ-E / VND5050AK-E
16/26
If the calculated power dissipation leads to a large resistor or several devices have to share
the same resistor then ST suggests to utilize Solution 2 (see below).
3.1.2
Solution 2:
A diode (D
GND
) in the ground line.
A resistor (R
GND
=1k
)
should be inserted in parallel to D
GND
if the device drives an
inductive load.
This small signal diode can be safely shared amongst several different HSDs. Also in this
case, the presence of the ground network will produce a shift (
≈
600mV) in the input
threshold and in the status output values if the microprocessor ground is not common to the
device ground. This shift will not vary if more than one HSD shares the same diode/resistor
network.
3.2
Load dump protection
D
ld
is necessary (
Voltage Transient Suppressor
) if the load dump peak voltage exceeds the
V
CC
max DC rating. The same applies if the device is subject to transients on the V
CC
line
that are greater than the ones shown in the ISO 7637-2: 2004(E) table.
3.3
μC I/Os protection:
If a ground protection network is used and negative transient are present on the V
CC
line,
the control pins will be pulled negative. ST suggests to insert a resistor (R
prot
) in line to
prevent the
μ
C I/Os pins to latch-up.
The value of these resistors is a compromise between the leakage current of
μ
C and the
current required by the HSD I/Os (Input levels compatibility) with the latch-up limit of
μ
C
I/Os.
-V
CCpeak
/I
latchup
≤
R
prot
≤
(V
OH
μ
C
-V
IH
-V
GND
) / I
IHmax
Calculation example:
For V
CCpeak
= - 100V and I
latchup
≥
20mA; V
OH
μ
C
≥
4.5V
5k
≤
R
prot
≤
180k
.
Recommended values: R
prot
=10k
, C
EXT
=10nF.
相關PDF資料 |
PDF描述 |
|---|---|
| VND5050J-E | Double channel high side driver with analog current sense for automotive applications |
| VND5N0713TR | ?OMNIFET?: FULLY AUTOPROTECTED POWER MOSFET |
| VND5N07FI | ?OMNIFET?: FULLY AUTOPROTECTED POWER MOSFET |
| VND5N07FM | ?OMNIFET?: FULLY AUTOPROTECTED POWER MOSFET |
| VND5N07-1 | ?OMNIFET?: FULLY AUTOPROTECTED POWER MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| VND5050AJ-E_08 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Double channel high side driver with analog current sense for automotive applications |
| VND5050AJTR-E | 功能描述:功率驅動器IC Double Ch Hi Side Driver analog RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| VND5050AK-E | 功能描述:功率驅動器IC Double Ch Hi Side Driver analog RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| VND5050AKTR-E | 功能描述:功率驅動器IC Double Ch Hi Side Driver analog RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| VND5050J-E | 功能描述:功率驅動器IC Double Ch Hi Side Driver auto RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復。