參數(shù)資料
型號: VND5N0713TR
廠商: 意法半導(dǎo)體
英文描述: ?OMNIFET?: FULLY AUTOPROTECTED POWER MOSFET
中文描述: ?OMNIFET?:完全AUTOPROTECTED功率MOSFET
文件頁數(shù): 2/15頁
文件大?。?/td> 367K
代理商: VND5N0713TR
VND5N07/VND5N07-1/VNP5N07FI/K5N07FM
2/15
Figure 2. Block Diagram
Table 3. Absolute Maximum Ratings
Table 4. Thermal Data
Symbol
Symbol
Parameter
Value
Unit
DPAK
ISOWATT220
SOT-82FM
IPAK
V
DS
Drain-Source Voltage (V
in
= 0)
Internally Clamped
V
V
in
Input Voltage
18
V
I
D
Drain Current
Internally Limited
A
I
R
Reverse DC Output Current
–7
A
V
esd
Electrostatic Discharge (C = 100 pF,
R =1.5 K
)
2000
V
P
tot
Total Dissipation at T
c
= 25 °C
60
24
9
W
T
j
Operating Junction Temperature
Internally Limited
°C
T
c
Case Operating Temperature
Internally Limited
°C
T
stg
Storage Temperature
-55 to 150
°C
Parameter
DPAK/IPAK
ISOWATT220
SOT-82FM
Unit
R
thj-case
Thermal Resistance Junction-case
Max
3.75
5.2
14
°C/W
R
thj-amb
Thermal Resistance Junction-ambient
Max
100
62.5
100
°C/W
相關(guān)PDF資料
PDF描述
VND5N07FI ?OMNIFET?: FULLY AUTOPROTECTED POWER MOSFET
VND5N07FM ?OMNIFET?: FULLY AUTOPROTECTED POWER MOSFET
VND5N07-1 ?OMNIFET?: FULLY AUTOPROTECTED POWER MOSFET
VND600-E DOUBLE CHANNEL HIGH SIDE DRIVER
VND60013TR DOUBLE CHANNEL HIGH SIDE SOLID STATE RELAY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
VND5N0713TR-E 制造商:STMicroelectronics 功能描述:
VND5N07-1-E 功能描述:電源開關(guān) IC - 配電 OMNIFETII FULLY AUTO PROTECT Pwr MOSFET RoHS:否 制造商:Exar 輸出端數(shù)量:1 開啟電阻(最大值):85 mOhms 開啟時(shí)間(最大值):400 us 關(guān)閉時(shí)間(最大值):20 us 工作電源電壓:3.2 V to 6.5 V 電源電流(最大值): 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23-5
VND5N07-E 功能描述:MOSFET N-Ch 70V 5A OmniFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
VND5N07FI 制造商:STMicroelectronics 功能描述:
VND5N07FM 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:OMNIFET: FULLY AUTOPROTECTED POWER MOSFET