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參數(shù)資料
| 型號(hào)： | VND830ASP13TR |
| 英文描述： | DOUBLE CHANNEL HIGH SIDE SOLID STATE RELAY |
| 中文描述： | 雙通道高側(cè)固態(tài)繼電器 |
| 文件頁(yè)數(shù)： | 8/17頁(yè) |
| 文件大?。?/td> | 297K |
| 代理商： | VND830ASP13TR |
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8/17
VND830ASP
GND
REVERSE BATTERY
Solution 1: Resistor in the ground line (R
GND
only). This
can be used with any type of load.
The following is an indication on how to dimension the
R
GND
resistor.
1) R
GND
≤
600mV / I
S(on)max
.
2) R
GND
≥ (
V
CC
) / (-I
GND
)
where -I
is the DC reverse ground pin current and can
be found in the absolute maximum rating section of the
device’s datasheet.
Power Dissipation in R
GND
(when V
CC
<0: during reverse
battery situations) is:
P
D
= (-V
CC
)
2
/R
GND
This resistor can be shared amongst several different
HSD. Please note that the value of this resistor should be
calculated with formula (1) where I
becomes the
sum of the maximum on-state currents of the different
devices.
Please note that if the microprocessor ground is not
common with the device ground then the R
will
produce a shift (I
* R
) in the input thresholds
and the status output values. This shift will vary
depending on how many devices are ON in the case of
several high side drivers sharing the same R
GND
.
PROTECTION
NETWORK
AGAINST
If the calculated power dissipation leads to a large resistor
or several devices have to share the same resistor then
the ST suggests to utilize Solution 2 (see below).
Solution 2: A diode (D
GND
) in the ground line.
A resistor (R
=1k
)
should be inserted in parallel to
D
GND
if the device will be driving an inductive load.
This small signal diode can be safely shared amongst
several different HSDs. Also in this case, the presence of
the ground network will produce a shift (
j
600mV) in the
input thresholds and the status output values if the
microprocessor ground is not common with the device
ground. This shift will not vary if more than one HSD
shares the same diode/resistor network.
LOAD DUMP PROTECTION
D
is necessary (Voltage Transient Suppressor) if the
load dump peak voltage exceeds V
max DC rating. The
same applies if the device will be subject to transients on
the V
line that are greater than the ones shown in the
ISO T/R 7637/1 table.
μ
C I/Os PROTECTION:
If a ground protection network is used and negative
transient are present on the V
line, the control pins will
be pulled negative. ST suggests to insert a resistor (R
prot
)
in line to prevent the
μ
C I/Os pins to latch-up.
The value of these resistors is a compromise between the
leakage current of
μ
C and the current required by the
V
CC
GND
OUTPUT2
CURRENT SENSE1
D
ld
+5V
R
prot
R
SENSE2
OUTPUT1
R
SENSE1
INPUT1
D
GND
R
GND
V
GND
CURRENT SENSE2
INPUT2
μ
C
R
prot
R
prot
R
prot
APPLICATION SCHEMATIC
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| VND830PEP | DOUBLE CHANNEL HIGH SIDE DRIVER |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| VND830ASP-E | 功能描述:電源開(kāi)關(guān) IC - 配電 DBL CH HI SIDE DRIVE RoHS:否 制造商:Exar 輸出端數(shù)量:1 開(kāi)啟電阻（最大值）:85 mOhms 開(kāi)啟時(shí)間（最大值）:400 us 關(guān)閉時(shí)間（最大值）:20 us 工作電源電壓:3.2 V to 6.5 V 電源電流（最大值）: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23-5 |
| VND830ASPTR-E | 功能描述:固態(tài)繼電器-PCB安裝 Double Channel High RoHS:否 制造商:Omron Electronics 控制電壓范圍: 負(fù)載電壓額定值:40 V 負(fù)載電流額定值:120 mA 觸點(diǎn)形式:1 Form A (SPST-NO) 輸出設(shè)備:MOSFET 封裝 / 箱體:USOP-4 安裝風(fēng)格:SMD/SMT |
| VND830E | 功能描述:電源開(kāi)關(guān) IC - 配電 DBLE CH HI-SIDE DRVR SIDE DRIVER RoHS:否 制造商:Exar 輸出端數(shù)量:1 開(kāi)啟電阻（最大值）:85 mOhms 開(kāi)啟時(shí)間（最大值）:400 us 關(guān)閉時(shí)間（最大值）:20 us 工作電源電壓:3.2 V to 6.5 V 電源電流（最大值）: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23-5 |
| VND830-E | 功能描述:IC DRIVER HIGH SIDE 2CH 16-SOIC RoHS:是 類(lèi)別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 內(nèi)部開(kāi)關(guān) 系列:VIPower™ 標(biāo)準(zhǔn)包裝:1,000 系列:- 類(lèi)型:高端/低端驅(qū)動(dòng)器 輸入類(lèi)型:SPI 輸出數(shù):8 導(dǎo)通狀態(tài)電阻:850 毫歐，1.6 歐姆 電流 - 輸出 / 通道:205mA，410mA 電流 - 峰值輸出:500mA，1A 電源電壓:9 V ~ 16 V 工作溫度:-40°C ~ 150°C 安裝類(lèi)型:表面貼裝 封裝/外殼:20-SOIC（0.295"，7.50mm 寬） 供應(yīng)商設(shè)備封裝:PG-DSO-20-45 包裝:帶卷 (TR) |
| VND830E13TR | 功能描述:電源開(kāi)關(guān) IC - 配電 DBLE CH HI-SIDE DRVR RoHS:否 制造商:Exar 輸出端數(shù)量:1 開(kāi)啟電阻（最大值）:85 mOhms 開(kāi)啟時(shí)間（最大值）:400 us 關(guān)閉時(shí)間（最大值）:20 us 工作電源電壓:3.2 V to 6.5 V 電源電流（最大值）: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23-5 |
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