參數(shù)資料
型號(hào)： VND830LSP-E
廠商： 意法半導(dǎo)體
英文描述： DOUBLE CHANNEL HIGH SIDE DRIVER
中文描述： 雙通道高邊驅(qū)動(dòng)器
文件頁數(shù)： 3/18頁
文件大?。?/td> 266K
代理商： VND830LSP-E
3/18
VND830SP
THERMAL DATA
(*) When mounted on a standard single-sided FR-4 board with 0.5cm
2
of Cu (at least 35
μ
m thick). Horizontal mounting and no artificial air
flow.
ELECTRICAL CHARACTERISTICS
(8V<V
CC
<36V; -40°C < T
j
< 150°C, unless otherwise specified)
(Per each channel)
POWER OUTPUT
(**) Per device
SWITCHING (V
CC
=13V)
Symbol
LOGIC INPUT
Symbol
R
thj-case
R
thj-amb
Parameter
Value
1.7
51.7 (*)
Unit
°C/W
°C/W
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Symbol
V
CC
(**)
V
USD
(**)
V
OV
(**)
Parameter
Test Conditions
Min
5.5
3
36
Typ
13
4
Max
36
5.5
Unit
V
V
V
m
m
μ
A
Operating Supply Voltage
Undervoltage Shut-down
Overvoltage Shut-down
R
ON
On State Resistance
I
OUT
=2A; T
j
=25°C
I
OUT
=2A; V
CC
> 8V
Off State; V
CC
=13V; V
IN=
V
OUT
=0V
Off State; V
CC
=13V; T
j
=25°C;
V
IN=
V
OUT
=0V
On State; V
CC
=13V
V
IN
=V
OUT
=0V; V
CC
=36V; T
j
=125°C
V
IN
=0V; V
OUT
=3.5V
V
IN
=V
OUT
=0V; Vcc=13V; T
j
=125°C
V
IN
=V
OUT
=0V; Vcc=13V; T
j
=25°C
60
120
40
I
S
(**)
Supply Current
12
12
5
25
7
50
0
5
3
μ
A
mA
μ
A
μ
A
μ
A
μ
A
I
L(off1)
I
L(off2)
I
L(off3)
I
L(off4)
Off State Output Current
Off State Output Current
Off State Output Current
Off State Output Current
0
-75
Parameter
Test Conditions
Min
Typ
Max
Unit
t
d(on)
Turn-on Delay Time
R
L
=6.5
from V
IN
rising edge to
V
OUT
=1.3V
R
L
=6.5
from V
IN
falling edge to
V
OUT
=11.7V
30
μ
s
t
d(off)
Turn-off Delay Time
30
μ
s
dV
OUT
/
dt
(on)
Turn-on Voltage Slope
R
L
=6.5
from V
OUT
=1.3V to
V
OUT
=10.4V
See
relative
diagram
See
relative
diagram
V/
μ
s
dV
OUT
/
dt
(off)
Turn-off Voltage Slope
R
L
=6.5
from V
OUT
=11.7V to
V
OUT
=1.3V
V/
μ
s
Symbol
V
IL
I
IL
V
IH
I
IH
V
I(hyst)
Parameter
Test Conditions
Min
Typ
Max
1.25
Unit
V
μ
A
V
μ
A
V
V
V
Input Low Level
Low Level Input Current
Input High Level
High Level Input Current
Input Hysteresis Voltage
V
IN
= 1.25V
1
3.25
V
IN
= 3.25V
10
0.5
6
V
ICL
Input Clamp Voltage
I
IN
= 1mA
I
IN
= -1mA
6.8
-0.7
8
1
相關(guān)PDF資料
PDF描述
VND830SP13TR 20 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
VND830LSPTR-E 功能描述:電源開關(guān) IC - 配電 DOUBLE CH HI-SIDE DR RoHS:否 制造商:Exar 輸出端數(shù)量:1 開啟電阻（最大值）:85 mOhms 開啟時(shí)間（最大值）:400 us 關(guān)閉時(shí)間（最大值）:20 us 工作電源電壓:3.2 V to 6.5 V 電源電流（最大值）: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23-5
VND830MSP 功能描述:功率驅(qū)動(dòng)器IC Double Ch High Side RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
VND830MSP13TR 功能描述:功率驅(qū)動(dòng)器IC Double Ch High Side RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
VND830MSP-E 功能描述:功率驅(qū)動(dòng)器IC Double Ch High Side RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
VND830MSPTR-E 功能描述:功率驅(qū)動(dòng)器IC Double Ch High Side RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
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