參數(shù)資料
型號: VP0106N3
廠商: SUPERTEX INC
元件分類: 小信號晶體管
英文描述: P-Channel Enhancement-Mode Vertical DMOS FETs
中文描述: 250 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
封裝: TO-92, 3 PIN
文件頁數(shù): 4/4頁
文件大?。?/td> 46K
代理商: VP0106N3
4
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 FAX: (408) 222-4895
www.supertex.com
07/08/02
2002 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
VP0104/VP0106/VP0109
Typical Performance Curves
Gate Drive Dynamic Characteristics
Q
G
(nanocoulombs)
V
G
T
j
(
°
C)
V
G
(
V
(th)
and R
DS
Variation with Temperature
On-Resistance vs. Drain Current
R
D
B
D
T
j
(
°
C)
Transfer Characteristics
V
GS
(volts)
I
D
Capacitance vs. Drain-to-Source Voltage
100
75
50
25
0
C
V
DS
(volts)
I
D
(amperes)
BV
DSS
Variation with Temperature
0
-10
-20
-30
-40
0
-2
-4
-6
-8
-10
-50
0
50
100
150
1.10
1.06
1.02
0.98
0.94
0.90
1.6
1.4
1.2
1.0
0.8
-50
0
50
100
150
-1.0
-0.8
-0.6
-0.4
-0.2
V
DS
= -25V
T
A
= -55
°
C
T
A
= 25
°
C
T
A
= 125
°
C
f = 1MHz
C
ISS
C
OSS
C
RSS
-10
-8
-6
-4
-2
0.2
0.4
0.6
0.8
1.0
0
70 pF
V
DS
=
-40V
V
DS
= -10V
45pF
50
40
30
20
10
0
-1.5
-0.3
-0.6
-0.9
-1.2
V
GS
= -5V
V
GS
= -10V
0
0
0
V
(th)
@ -1.0mA
R
DS(ON)
@ -10V, -0.5A
R
DS(ON)
@ -5V, 0.1A
1.6
1.4
1.2
1.0
0.8
0.6
70 pF
R
D
(
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參數(shù)描述
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