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參數(shù)資料
| 型號： | VP0300L |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | ER 3C 2#12 1#16 SKT RECP BOX RoHS Compliant: No |
| 中文描述： | P溝道30 V的（副）的MOSFET |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 42K |
| 代理商： | VP0300L |
VP0300L/LS, VQ2001J/P
Vishay Siliconix
Document Number: 70217
S-04279—Rev. E, 16-Jul-01
www.vishay.com
11-1
P-Channel 30-V (D-S) MOSFETs
Part Number
V
(BR)DSS
Min (V)
r
DS(on)
Max ( )
V
GS(th)
(V)
I
D
(A)
VP0300L
2.5 @ V
GS
= –12 V
2.5 @ V
GS
= –12 V
2 @ V
GS
= –12 V
2 @ V
GS
= –12 V
–2 to –4.5
–0.32
VP0300LS
–2 to –4.5
–0.5
VQ2001J
–30
–2 to –4.5
–0.6
VQ2001P
–2 to –4.5
–0.6
High-Side Switching
Low On-Resistance: 1.5
Moderate Threshold: –3.1 V
Fast Switching Speed: 17 ns
Low Input Capacitance: 60 pF
Ease in Driving Switches
Low Offset (Error) Voltage
Low-Voltage Operation
High-Speed Switching
Easily Driven Without Buffer
Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
Battery Operated Systems
Power Supply, Converter Circuits
Motor Control
TO-226AA
(TO-92)
Top View
VP0300L
S
D
G
1
2
3
TO-92S
(Copper Lead Frame)
Top View
VP0300LS
S
D
G
1
2
3
Plastic:
Sidebraze: VQ2001P
VQ2001J
S
3
1
2
3
4
5
6
7
14
13
12
11
10
9
8
Top View
Dual-In-Line
D
1
D
4
S
1
S
4
G
1
G
4
NC
NC
G
2
G
3
S
2
D
2
D
3
P
P
P
P
For device marking, see the last page of this data sheet.
VQ2001J/P
Parameter
Symbol
VP0300L
VP0300LS
Single
Total Quad
Unit
Drain-Source Voltage
V
DS
–30
–30
–30
–30
Gate-Source Voltage
V
GS
20
20
20
20
V
Continuous Drain Current
(T
J
= 150 C)
T
A
= 25 C
–0.32
–0.5
–0.6
–0.6
T
A
= 100 C
I
D
–0.2
–0.32
–0.37
–0.37
A
Pulsed Drain Current
a
I
DM
–2.4
–3
–2
–2
T
A
= 25 C
0.8
0.9
1.3
2
Power Dissipation
T
A
= 100 C
P
D
0.32
0.4
0.52
0.8
W
Thermal Resistance, Junction-to-Ambient
R
thJA
156
139
96
62.5
C/W
Operating Junction and
Storage Temperature Range
T
J
, T
stg
–55 to 150
C
Notes
a.
Pulse width limited by maximum junction temperature.
For applications information see AN804.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| VP0300LS | P-Channel 30-V (D-S) MOSFETs |
| VP0300L | P-Channel Enhancement-Mode MOSFET Transistor(最小漏源擊穿電壓-30V，夾斷電流-0.32A的P溝道增強(qiáng)型MOSFET) |
| VP0300 | P-Channel Enhancement-Mode Vertical DMOS FETs |
| VP0340N5 | TRANSISTOR | MOSFET | P-CHANNEL | 400V V(BR)DSS | 1.6A I(D) | TO-220AB |
| VP0340N1 | TRANSISTOR | MOSFET | P-CHANNEL | 400V V(BR)DSS | 2.7A I(D) | TO-3 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| VP0300LS | 功能描述:MOSFET 30V 0.5A 0.9W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| VP0300L-TR1 | 制造商:Vishay Angstrohm 功能描述:Trans MOSFET P-CH 30V 0.32A 3-Pin TO-226AA T/R |
| VP0300M | 制造商:SIL 功能描述: 制造商:Vishay Siliconix 功能描述: |
| VP0340N1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 400V V(BR)DSS | 2.7A I(D) | TO-3 |
| VP0340N5 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 400V V(BR)DSS | 1.6A I(D) | TO-220AB |
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