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參數(shù)資料
| 型號： | VP0300LS |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | P-Channel 30-V (D-S) MOSFETs |
| 中文描述： | P溝道30 V的（副）的MOSFET |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 42K |
| 代理商： | VP0300LS |
VP0300L/LS, VQ2001J/P
Vishay Siliconix
www.vishay.com
11-2
Document Number: 70217
S-04279
—
Rev. E, 16-Jul-01
Limits
VP0300L/LS
VQ2001J/P
Parameter
Symbol
Test Conditions
Typ
a
Min
Max
Min
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
=
–
10 A
–
55
–
30
–
30
Gate-Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
=
–
1 mA
–
3.1
–
2
–
4.5
–
2
–
4.5
V
V
DS
=
0
V, V
GS
=
16 V
100
Gate-Body Leakage
I
GSS
T
J
= 125 C
500
nA
V
DS
=
0
V, V
GS
=
20 V
100
V
DS
=
–
24 V, V
GS
= 0 V
–
10
Zero Gate Voltage Drain Current
I
DSS
T
J
= 125 C
–
500
–
500
A
V
DS
=
–
30 V, V
GS
= 0 V
–
10
On-State Drain Current
b
I
D(on)
V
DS
=
–10
V, V
GS
=
–12
V
–
2.8
–
1.5
–
1.5
A
V
GS
=
–12
V, I
D
=
–1
A
1.5
2.5
2
Drain-Source On-Resistance
b
r
DS(on)
T
J
= 125 C
2.6
3.6
3.6
Forward Transconductance
b
g
fs
V
DS
=
–10
V, I
D
=
–
0.5 A
370
200
200
Common Source Output Conductance
b
g
os
V
DS
=
–
7.5 V, I
D
=
–0.05
A
0.25
mS
Dynamic
Input Capacitance
C
iss
60
150
150
Output Capacitance
C
oss
V
DS
=
–
15 V, V
GS
= 0 V
f = 1 MHz
40
100
100
pF
Reverse Transfer Capacitance
C
rss
10
60
60
Switching
c
Turn-On Time
t
ON
V
DD
=
–25
V, R
L
= 23
I
D
–
1 A, V
=
–
10 V
R
G
= 25
V
DD
=
–
15 V, R
L
= 23
I
D
–
0.6 A, V
=
–
10 V
R
G
= 25
19
30
Turn-Off Time
t
OFF
17
30
Turn-On Time
t
ON
19
30
ns
Turn-Off Time
t
OFF
16
30
Notes
a.
b.
c.
For DESIGN AID ONLY, not subject to production testing.
Pulse test: PW
300 s duty cycle
Switching time is essentially independent of operating temperature.
VPEA03
2%.
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