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參數(shù)資料
| 型號(hào)： | VP0808L |
| 廠商： | SUPERTEX INC |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | P-Channel Enhancement-Mode Vertical DMOS FETs |
| 中文描述： | 280 mA, 80 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大?。?/td> | 433K |
| 代理商： | VP0808L |
2
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 FAX: (408) 222-4895
www.supertex.com
11/12/01
2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
0V
V
DD
R
gen
0V
-10V
VP0808
Package
I
D
(continuous)*
I
D
(pulsed)
Power Dissipation
θ
jc
°
C/W
θ
ja
°
C/W
TO-92
-0.28A
-3A
1W
125
170
*
I
D
(continuous) is limited by max rated T
j
.
Thermal Characteristics
Switching Waveforms and Test Circuit
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BV
DSS
V
GS(th)
I
GSS
I
DSS
Drain-to-Source Breakdown Voltage
-80
V
V
GS
= 0V, I
D
=-10
μ
A
V
GS
= V
DS
, I
D
= -1mA
V
GS
=
±
20V, V
DS
= 0V
V
GS
= 0V, V
DS
= Max Rating
V
GS
= 0V, V
DS
= Max Rating
T
A
= 125
°
C
V
GS
= -10V, V
DS
= -15V
V
GS
= -10V, I
D
= -1A
V
DS
= -10V, I
D
= -0.5A
Gate Threshold Voltage
-1.0
-4.5
V
Gate Body Leakage
-100
nA
Zero Gate Voltage Drain Current
-10
-500
μ
A
I
D(ON)
R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
ON-State Drain Current
-1.1
A
Static Drain-to-Source ON-State Resistance
5.0
Forward Transconductance
200
m
Input Capacitance
150
Common Source Output Capacitance
60
pF
Reverse Transfer Capacitance
25
Turn-ON Delay Time
15
Rise Time
40
Turn-OFF Time
30
Fall Time
30
Diode Forward Voltage Drop
-1.2
V
V
GS
= 0V, I
SD
= -0.9A
Notes:
1. All D.C. parameters 100% tested at 25
°
C unless otherwise stated. (Pulse test: 300
μ
s pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Electrical Characteristics
(@ 25
°
C unless otherwise specified)
ns
V
DD
= -25V, I
D
= -0.5A
R
GEN
= 25
V
GS
= 0V, V
DS
= -25V
f = 1MHz
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參數(shù)描述 |
|---|---|
| VP0808L-G | 功能描述:MOSFET 80V 5Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| VP0808L-G P002 | 制造商:Supertex Inc 功能描述:Trans MOSFET P-CH 80V 0.28A 3-Pin TO-92 T/R 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET |
| VP0808L-G P003 | 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET |
| VP0808L-G P005 | 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET |
| VP0808L-G P013 | 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET |
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