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參數(shù)資料
| 型號(hào)： | VP12 |
| 廠商： | Supertex, Inc. |
| 英文描述： | P-Channel Enhancement-Mode Vertical DMOS Power FETs |
| 中文描述： | P通道增強(qiáng)型立式DMOS功率場(chǎng)效應(yīng)管 |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大?。?/td> | 23K |
| 代理商： | VP12 |
RECTRON
RATING AND CHARACTERISTIC CURVES ( HVP5 THRU HVP16 )
FIG. 2 - MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
P
NUMBER OF CYCLES AT 60Hz
60
50
40
30
20
10
0
1
10
100
8.3ms Single Half Sine-Wave
(JEDEC Method)
FIG. 3 - TYPICAL REVERSE CHARACTERISTICS
I
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
TJ = 25
0
20
40
60
80
100
120
140
10
.01
.02
.04
.06
.1
.2
.4
.6
1.0
2
4
6
FIG. 4 - TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
I
INSTANTANEOUS FORWARD VOLTAGE, (V)
1000
100
10
1.0
0.1
6
5
4
7
8
9
10
11
12
TJ = 25
Pulse Width = 300us
1% Duty Cycle
HP0HP6
HP~V8
FIG. 1 - TYPICAL FORWARD CURRENT
DERATING CURVE
A
AMBIENT TEMPERATURE, ( )
0
50
100
150
175
750
600
450
300
150
0
Single Phase Half Wave
60Hz Inductive or
Resistive Load
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| VP1304 | P-Channel Enhancement-Mode Vertical DMOS FETs |
| VP1304N3 | P-Channel Enhancement-Mode Vertical DMOS FETs |
| VP1310N8 | TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | TO-243AA |
| VP1310 | P-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓-100V,25Ω，P溝道增強(qiáng)型垂直DMOS結(jié)構(gòu)場(chǎng)效應(yīng)管) |
| VP1316N2 | P-Channel Enhancement-Mode Vertical DMOS Power FETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| VP-12 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TIP HOT BLOW 10.0MM |
| VP12/12 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:Analog IC |
| VP1202A0S | 制造商:SHIELD 制造商全稱(chēng):SHIELD s.r.l. 功能描述:For electrovalves, receptacle, male |
| VP1203A0S | 制造商:SHIELD 制造商全稱(chēng):SHIELD s.r.l. 功能描述:For electrovalves, receptacle, male |
| VP1204N1 | 制造商:SUPERTEX 制造商全稱(chēng):SUPERTEX 功能描述:P-Channel Enhancement-Mode Vertical DMOS Power FETs?????? |
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