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參數(shù)資料
| 型號： | VSC7940W |
| 廠商： | VITESSE SEMICONDUCTOR CORP |
| 元件分類： | 其它接口 |
| 英文描述： | SONET/SDH 3.125Gb/s Laser Diode Driver with Automatic Power Control |
| 中文描述： | SPECIALTY INTERFACE CIRCUIT, UUC48 |
| 封裝： | DIE-48 |
| 文件頁數(shù)： | 3/16頁 |
| 文件大?。?/td> | 167K |
| 代理商： | VSC7940W |
VITESSE
Preliminary Data Sheet
VSC7940
SONET/SDH 3.125Gb/s
Laser Diode Driver with Automatic Power Control
G52357-0, Rev 3.2
05/11/01
Page 3
VITESSE
SEMICONDUCTOR CORPORATION
741 Calle Plano
Camarillo, CA 93012
Tel: (800) VITESSE
FAX: (805) 987-5896
Email: prodinfo@vitesse.com
Internet: www.vitesse.com
NOTES: (1) Both I
BIAS
and I
MOD
will turn off if any of the current set pins are grounded. (2)
Assumes laser diode to monitor diode transfer func-
tion does not change with temperature.
Table 3: PECL and TTL/CMOS Input
/
Output Specifications
Absolute Maximum Ratings
(1)
Power Supply Voltage (V
CC
).............................................................................................................-0.5V to +7V
Current into BIAS.....................................................................................................................-20mA to +150mA
Current into OUT+, OUT-...............................................................................................................................TBD
Current into MD.............................................................................................................................-5mA to +5mA
Current into FAIL.........................................................................................................................-10mA to 30mA
Voltage at DATA+, DATA-, CLK+, CLK-, ENABLE, LATCH.........................................-0.5V to (V
CC
+ 0.5V)
Voltage at APCFILT, MODSET, BIASMAX, APCSET, MD, FAIL.............................................-0.5V to +3.0V
Voltage at OUT+, OUT- .....................................................................................................-0.5V to (V
CC
+ 1.5V)
Voltage at BIAS..................................................................................................................-0.5V to (V
CC
+ 0.5V)
Continuous Power Dissipation (T
A
= +85
°
C, TQFP derate 20.8mW/
°
C above +85
°
C) .........................1350mW
Operating Junction Temperature Range...................................................................................... -55
°
C to +150
°
C
Storage Temperature Range ........................................................................................................-65
°
C to +165
°
C
NOTE: (1) CAUTION: Stresses listed under “Absolute Maximum Ratings” may be applied to devices one at a time without caus-
ing permanent damage. Functionality at or above the values listed is not implied. Exposure to these values for extended
periods may affect device reliability.
Recommended Operating Conditions
Positive Voltage Rail (V
CC
)..............................................................................................................................+5V
Negative Voltage Rail (GND) ............................................................................................................................ 0V
Ambient Temperature Range (T
A
)..................................................................................................-40
°
C to +85
°
C
Modulation Current Stability
-480
-50
480
ppm/
°
C
I
MOD
=60mA
I
MOD
=5mA
I
BIAS
/I
BIASMON
I
MOD
/I
MODMON
250
A
BIAS
A
MOD
BIASMON to I
BIAS
Gain
MODMON to I
MON
Gain
37
29
Symbol
Parameter
Min
Typ
Max
Units
Conditions
V
ID
Differential Input Voltage
100
V
CC
-
1.49
-1
2.0
1600
V
CC
-
V
ID
/4
10
mV
p-p
(DATA+)-(DATA-)
V
ICM
Common-Mode Input Voltage
V
CC
-
1.32
V
PECL-compatible
I
IN
V
IH
V
IL
Clock and Data Input Current
TTL Input High Voltage (ENABLE, LATCH)
TTL Input Low Voltage (ENABLE, LATCH)
mA
V
V
0.8
TTL Output High Voltage (FAIL)
2.4
V
CC
-
0.3
V
CC
V
Sourcing 50μA
TTL Output Low Voltage (FAIL)
0.1
0.44
V
Sinking 100μA
Symbol
Parameter
Min
Typ
Max
Units
Conditions
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