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參數(shù)資料
| 型號： | VUB116 |
| 廠商： | IXYS Corporation |
| 英文描述： | Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System |
| 中文描述： | 三相整流橋制動系統(tǒng)的IGBT和快速恢復二極管 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 50K |
| 代理商： | VUB116 |
2002 IXYS All rights reserved
2 - 2
Advanced Technical Information
VUB 116 / 145
2
I
R
V
R
= V
RRM
, T
VJ
= 25°C
V
R
= V
RRM
, T
VJ
= 150°C
0.1
mA
mA
2
V
F
I
F
= 80 A, T
VJ
= 25°C
I
F
= 150 A,
T
VJ
= 25°C
VUB 116
VUB 145
1.43
1.68
V
V
V
T0
for power-loss calculations only
VUB 116
VUB 145
VUB 116
VUB 145
0.85
0.85
7.1
5.9
V
V
r
T
T
VJ
= 150°C
m
m
R
thJC
per diode
VUB 116
VUB 145
0.65 K/W
0.5 K/W
R
thCH
VUB 116
VUB 145
0.1 K/W
0.1 K/W
V
BR(CES)
V
GE(th)
V
= 0 V, I
C
= 0.1 mA
I
C
= 8 mA
I
C
= 3 mA
1200
4.5
4.5
V
V
V
VUB 116
VUB 145
6.45
6.45
I
CES
T
VJ
=
25°C, V
CE
= 1200 V
T
VJ
=
125°C, V
CE
= 0,8 V
CES
0.1
0.5
mA
mA
V
CEsat
V
GE
= 15 V, I
C
= 100 A
V
GE
= 15 V, I
C
= 150 A
VUB 116
VUB 145
3.5
3.7
V
V
t
SC
(SCSOA)
V
GE
= 15 V, V
CE
= 720 V, T
VJ
=
125°C,
10
μs
RBSOA
V
= 15 V, V
= 1200 V, T
= 125°C,
clamped inductive load, L = 100 μH
R
G
= 22
R
G
= 15
VUB 116
VUB 145
100
150
A
A
C
ies
V
CE
= 25 V, f = 1 MHz, V
GE
= 0 V VUB 116
3.8
5.7
nF
nF
VUB 145
t
d(on)
t
d(off)
E
on
150
680
ns
ns
mJ
mJ
mJ
mJ
VUB 116
VUB 145
VUB 116
VUB 145
6
9
5
E
off
7.5
R
thJC
VUB 116
VUB 145
0.33 K/W
0.22 K/W
R
thJH
VUB 116
VUB 145
0.66 K/W
0.44 K/W
I
R
V
R
= V
, T
VJ
= 25°C
V
R
= 1200 V, T
VJ
= 125°C
0.25
mA
mA
1
V
F
I
F
= 30 A,
T
VJ
= 25°C
2.76
V
V
T0
r
T
For power-loss calculations only
T
VJ
= 150°C
1.3
16
V
m
I
RM
I
F
= 50 A, -di
F
/dt = 100 A/μs, V
R
= 100 V
5.5
11
A
t
rr
I
F
= 1 A, -di
F
/dt = 200 A/μs, V
R
= 30 V
40
ns
R
thJC
R
thCH
0.9 K/W
0.1 K/W
R
25
B
25/50
4.75
5.0 5.25
3375
k
K
Symbol
Conditions
Characteristic Values
(T
VJ
= 25
°
C, unless otherwise specified)
min.
typ.
max.
R
F
V
CE
= 720 V, I
C
= 50/75 A
V
= 15 V, R
= 32/15
Inductive load; L = 100 μH
T
VJ
=
125°C
I
R
N
相關PDF資料 |
PDF描述 |
|---|---|
| VUB116-16NO1 | Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System |
| VUB120-12NO2 | Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System |
| VUB120-12NO1 | Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| VUB116-16NO1 | 功能描述:IGBT 晶體管 116 Amps 1600V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| VUB116-16NOXT | 功能描述:橋式整流器 3-Phase Rectifier Bridge with Brake RoHS:否 制造商:Vishay 產(chǎn)品:Single Phase Bridge 峰值反向電壓:1000 V 最大 RMS 反向電壓: 正向連續(xù)電流:4.5 A 最大浪涌電流:450 A 正向電壓下降:1 V 最大反向漏泄電流:10 uA 功率耗散: 最大工作溫度:+ 150 C 長度:30.3 mm 寬度:4.1 mm 高度:20.3 mm 安裝風格:Through Hole 封裝 / 箱體:SIP-4 封裝:Tube |
| VUB120-12NO1 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System |
| VUB120-12NO2 | 功能描述:IGBT 模塊 120 Amps 1200V RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| VUB120-16NO1 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System |
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