參數(shù)資料
型號: VUB60-16NO1
廠商: IXYS CORP
元件分類: IGBT 晶體管
英文描述: Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System
中文描述: 31 A, 1200 V, N-CHANNEL IGBT
文件頁數(shù): 3/4頁
文件大?。?/td> 110K
代理商: VUB60-16NO1
2000 IXYS All rights reserved
3 - 4
VUB 60
R
G
0
20
40
60
80
100
0.9
1.0
1.1
1.2
1.3
E
off
t
fi
0
40
80
120
160
0
10
20
30
40
50
60
70
80
A
I
C
0.0001
0.001
0.01
0.1
1
10
0
10
20
30
40
50
60
70
A
0
10
20
30
40
50
0.0
0.5
1.0
1.5
2.0
E
off
t
fi
-50 -25
0
25 50 75 100 125 C
T
VJ
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.4
0
2
4
6
8
10
12
14
0
20
40
60
80
100
W
I
C
norm.
V
A
T
H
I
d(AV)M
°
C
V
CE(sat)
I
C
V
CE
0
10
20
30
40
50
60
70
0
20
40
60
80
100
120
140
W
P
tot
I
d(AV)M
A
T
A
V
GE
= 15V
T
VJ
= 25
°
C
I
C
= 50A
s
T
VJ
=125
°
C
I
C
= 25A
norm. to 4.7
W
40
80
120
160
°
C
R
thHA
[K/W]
0.5
1
1.5
2
3
4
6
V
GE
= 13V
V
GE
= 11V
V
GE
= 9V
D=0.1
D=0.3
D=0.2
D=0.7
D=0.4
°
I
C
= 25A
I
C
= 12.5A
E
off
t
fi
A
norm.
E
off
t
fi
t
p
T
V
J
=125
°
C
R
G
= 4.7
W
norm.
V
GE
= 15V
T
H
= 80
°
C
D=0.5
Fig. 6 Output characteristics for
braking (IGBT)
Fig. 7 Saturation voltage versus
junction temperature
normalized (IGBT)
Fig. 8 Turn-off energy per pulse and
fall time versus collector
current, normalized (IGBT)
Fig. 9 Collector current versus pulse width and duty cycle (IGBT)
Fig.10 Turn-off energy per pulse and
fall time versus R
G
(IGBT)
T
Fig. 4 Power dissipation versus direct output current and ambient temperature
(Rectifier bridge)
Fig. 5 Maximum forward current
versus heatsink temperature
(Rectifier bridge)
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