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參數(shù)資料
| 型號(hào)： | VUI30-12N1 |
| 廠商： | IXYS CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Rectifier Module for Three Phase Power Factor Correction |
| 中文描述： | 95 A, 1200 V, N-CHANNEL IGBT |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 54K |
| 代理商： | VUI30-12N1 |
1 - 2
2001 IXYS All rights reserved
IXYS Semiconductor GmbH
Edisonstr. 15,
Phone: +49-6206-503-0, Fax: +49-6206-503627
D-68623 Lampertheim
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670
Advanced Technical Information
Rectifier Module for
Three Phase Power Factor Correction
IXYS reserves the right to change limits, test conditions and dimensions.
VUI 30-12 N1
Typical Rectified Mains Power
P
n
= 15 kW
at V
n
= 400 V 3~; f
T
= 15 kHz; T
C
= 80°C
Features
NPT IGBT with low saturation voltage
fast recovery epitaxial diodes (FRED)
module package:
- high level of integration
- solder terminals for PCB mounting
- isolated DCB ceramic base plate
- large creepage and strike distances
Applications
Three phase rectifier with power factor
correction, set up as follows:
input from three phase mains
- wide range of input voltage
- mains currents approximately sinusoidal
in phase with mains voltage
- topology permits to control overcurrent
such as in case of input voltage peaks
output
- direct current link
- buck type converter - reduced output
voltage
- possibility to supply boost converter,
inverter etc.
required components
- one power semiconductor module per
phase
- one inductor and one capacitor per
phase on mains side
- output inductor, depending on supplied
circuit
Transistor T
Symbol
Conditions
Maximum Ratings
V
CES
T
VJ
= 25°C to 150°C
1200
V
V
GES
±
20
V
I
C25
I
C80
T
C
= 25°C
T
C
= 80°C
95
65
A
A
I
CM
V
CEK
V
=
±
15 V; R
= 22
; T
VJ
= 125°C
RBSOA; L = 100 μH
100
V
CES
A
t
(SCSOA)
V
= V
; V
GE
=
±
15 V; R
G
= 22
; T
VJ
= 125°C
non-repetitive
10
μs
Symbol
Conditions
Characteristic Values
(T
VJ
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
CE(sat)
I
C
= 20 A; V
GE
= 15 V; T
VJ
= 25°C
1.7
1.9
2.0
V
V
T
VJ
= 125°C
V
GE(th)
I
C
= 2 mA; V
GE
= V
CE
4.5
6.5
V
I
CES
V
CE
= V
CES
;
V
GE
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
1.6
mA
mA
1.8
I
GES
V
CE
= 0 V; V
GE
=
±
20 V
400
nA
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
100
70
500
70
3.0
2.2
ns
ns
ns
ns
mJ
mJ
C
ies
Q
Gon
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
V
CE
= 600 V; V
GE
= 15 V; I
C
= 50 A
3.3
240
nF
nC
R
thJC
R
thJH
0.3 K/W
with heatsink transfer paste
0.6
K/W
Inductive load, T
VJ
= 125°C
V
CE
= 600 V; I
C
= 20 A
V
GE
= ±15 V; R
G
= 22
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