參數(shù)資料
型號: W11F
英文描述: (38.25 k)
中文描述: (38.25十一)
文件頁數(shù): 1/2頁
文件大小: 38K
代理商: W11F
W005M – W10M
1 of 2 2000 Won-Top Electronics
W005M – W10M
1.5A BRIDGE RECTIFIER
Features
!
Diffused Junction
!
Low Forward Voltage Drop A
!
High Current Capability
!
High Reliability
!
High Surge Current Capability B
!
Ideal for Printed Circuit Boards
+ ~ ~ -
!
UL Recognized File # E157705
C D
Mechanical Data
!
Case: Molded Plastic E
!
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208 ~
!
Polarity: As Marked on Body
!
Weight: 1.1 grams (approx.) -
!
Mounting Position: Any +
!
Marking: Type Number G
G
~
Maximum Ratings and Electrical Characteristics
@T
A
=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
W005M W01M
W02M
W04M
W06M
W08M
W10M
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
50
100
200
400
600
800
1000
V
RMS Reverse Voltage
V
R(RMS)
35
70
140
280
420
560
700
V
Average Rectified Output Current
(Note 1) @T
A
= 50°C
I
O
1.5
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
I
FSM
40
A
Forward Voltage (per element) @I
F
= 1.5A
V
FM
1.0
V
Peak Reverse Current @T
A
= 25°C
At Rated DC Blocking Voltage @T
A
= 100°C
I
RM
10
500
μA
Operating Temperature Range
T
j
-55 to +125
°C
Storage Temperature Range
T
STG
-55 to +150
°C
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case.
W TE
POWER SEMICONDUCTORS
WOB
Min
8.60
5.0
27.9
25.4
0.71
4.60
Dim
A
B
C
D
E
G
Max
9.10
5.50
0.81
5.60
All Dimensions in mm
相關(guān)PDF資料
PDF描述
W01F (38.25 k)
W02F (38.25 k)
W04F (38.25 k)
W06 1.5A Single Phase Silicon Bridge
W08 SINGLE PHASE SILICON BRIDGE RECTIFIER VOLTAGE: 50 TO 1000V CURRENT: 1.5A
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