參數(shù)資料
型號： W19B160BTB7H
廠商： WINBOND ELECTRONICS CORP
元件分類： PROM
英文描述： 1M X 16 FLASH 2.7V PROM, 7 ns, PBGA48
封裝： 6 X 8 MM, 0.80 MM PITCH, GREEN, TFBGA-48
文件頁數(shù)： 18/47頁
文件大小： 628K
代理商： W19B160BTB7H
W19B160BT/B DATA SHEET
Publication Release Date Dec,30, 2008
- 25 -
Revision A8
10. Command is valid when device is ready to read array data or when device is in auto select mode.
11. See Auto-select Codes table for device ID information.
8.9 Write Operation Status
STATUS
DQ7
(NOTE 2)
DQ6
DQ5
(NOTE1)
DQ3
DQ2
(NOTE 2)
RY/#BY
Embedded Program Algorithm
#DQ7
Toggle
0
N/A
No toggle
0
Standard
Mode
Embedded Erase Algorithm
0
Toggle
0
1
Toggle
0
Notes:
1. DQ5 switches to ‘1’ when an Embedded Program or Embedded Erase operation has exceeded the maximum timing
limits. Refer to the section on DQ5 for more information.
2. DQ7 and DQ2 requires a valid address when reading status information. Please refer to related sections for details.
相關(guān)PDF資料
PDF描述
W23-X1A3Z-0.5 PUSHBUTTON SWITCH, SPST, MOMENTARY, 0.5A, 50VDC, PANEL MOUNT
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W31-X2M5Z-10 TOGGLE SWITCH, SPST, LATCHED, 10A, 50VDC, PANEL MOUNT-THREADED
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
W19B160BTBH7H 制造商:WINBOND 制造商全稱:Winbond 功能描述:16Mbit, 2.7~3.6 volt CMOS flash memory
W19B160BTBM7H 制造商:WINBOND 制造商全稱:Winbond 功能描述:16Mbit, 2.7~3.6 volt CMOS flash memory
W19B160BTT7H 制造商:WINBOND 制造商全稱:Winbond 功能描述:2.7~3.6-volt write (program and erase) operations, Fast write operation
W19B160TB7H7H 制造商:WINBOND 制造商全稱:Winbond 功能描述:16Mbit, 2.7~3.6 volt CMOS flash memory
W19B160TB7M7H 制造商:WINBOND 制造商全稱:Winbond 功能描述:16Mbit, 2.7~3.6 volt CMOS flash memory
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