參數(shù)資料
型號: W29C040T70BN
廠商: WINBOND ELECTRONICS CORP
元件分類: PROM
英文描述: 512K X 8 FLASH 5V PROM, 70 ns, PDSO32
封裝: TSOP1-32
文件頁數(shù): 24/28頁
文件大?。?/td> 257K
代理商: W29C040T70BN
W29C040
Publication Release Date: Aug. 14, 2006
- 5 -
Revision A11
software data protection feature. To reset the device to unprotected mode, a six-byte command
sequence is required. For information about specific codes, see the Command Codes for Software
Data Protection in the Table of Operating Modes. For information about timing waveforms, see the
timing diagrams below.
6.4
Hardware Data Protection
The integrity of the data stored in the W29C040 is also hardware protected in the following ways:
(1) Noise/Glitch Protection: A #WE pulse of less than 15 nS in duration will not initiate a write cycle.
(2) VDD Power Up/Down Detection: The write and read operation are inhibited when VDD is less than
2.5V.
(3) Write Inhibit Mode: Forcing #OE low, #CE high, or #WE high will inhibit the write operation. This
prevents inadvertent writes during power-up or power-down periods.
(4) VDD power-on delay: When VDD has reach its sense level, the device will automatically time-out 10
mS before any write (erase/program) operation.
6.5
Chip Erase Modes
The entire device can be erased by using a six-byte software command code. See the Software Chip
Erase Timing Diagram.
6.6
Boot Block Operation
There are two boot blocks (16K bytes each) in this device, which can be used to store boot code. One
of them is located in the first 16K bytes and the other is located in the last 16K bytes of the memory.
The first 16K or last 16K of the memory can be set as a boot block by using a seven-byte command
sequence.
See Command Codes for Boot Block Lockout Enable for the specific code. Once this feature is set the
data for the designated block cannot be erased or programmed (programming lockout); a regular
programming method can change other memory locations. Once the boot block programming lockout
feature is activated, the chip erase function will be disabled. In order to detect whether the boot block
feature is set on the two 16K blocks, users can perform a six-byte command sequence: enter the
product identification mode (see Command Codes for Identification/Boot Block Lockout Detection for
specific code), and then read from address "00002 hex" (for the first 16K bytes) or "7FFF2 hex" (for
the last 16K bytes). If the output data is "FF hex," the boot block programming lockout feature is
activated; if the output data is "FE hex," the lockout feature is inactivated and the block can be
programmed.
To return to normal operation, perform a three-byte command sequence to exit the identification
mode. For the specific code, see Command Codes for Identification/Boot Block Lockout Detection.
相關(guān)PDF資料
PDF描述
WED7G064ATA33XDC25 32M X 16 FLASH 3.3V PROM MODULE, DMA144
WED2ZL361MS30BC 1M X 36 ZBT SRAM, 3 ns, PBGA119
W3HG64M72EER534AD7SG 64M X 72 DDR DRAM MODULE, 0.5 ns, ZMA244
WS128K32N-100HIE 512K X 8 MULTI DEVICE SRAM MODULE, 100 ns, CHIP66
WMS128K8L-70DRQ 128K X 8 STANDARD SRAM, 70 ns, CDSO32
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
W29C040T-90 制造商:WINBOND 制造商全稱:Winbond 功能描述:512K X 8 CMOS FLASH MEMORY
W29C040T-90B 制造商:WINBOND 制造商全稱:Winbond 功能描述:512K X 8 CMOS FLASH MEMORY
W29C040T90BN 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM
W29C040T-90N 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EEPROM|FLASH|512KX8|CMOS|TSSOP|32PIN|PLASTIC
W29C101-12 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 Flash EEPROM