參數(shù)資料
型號: W39F010-90
廠商: WINBOND ELECTRONICS CORP
元件分類: PROM
英文描述: 128K X 8 FLASH 5V PROM, 90 ns, PDIP32
封裝: 0.600 INCH, PLASTIC, DIP-32
文件頁數(shù): 24/26頁
文件大?。?/td> 336K
代理商: W39F010-90
W39F010
Publication Release Date: June 17, 2002
- 7 -
Revision A2
DQ7 at one instant of time and then that byte
′s valid data at the next instant of time. Depending on
when the system samples the DQ7 output, it may read the status or valid data. Even if the device has
completed the Embedded Algorithm operations and DQ7 has a valid data, the data outputs on DQ0–
DQ6 may be still invalid. The valid data on DQ0
DQ7 will be read on the successive read attempts.
The Data Polling feature is only active during the Embedded Programming Algorithm, Embedded
Erase Algorithm, or page erase time-out (see "Command Definitions").
DQ6: Toggle Bit
The W39F010 also features the "Toggle Bit" as a method to indicate to the host system that the
embedded algorithms are in progress or completed.
During an Embedded Program or Erase Algorithm cycle, successive attempts to read (#OE toggling)
data from the device at any address will result in DQ6 toggling between one and zero. Once the
Embedded Program or Erase Algorithm cycle is completed, DQ6 will stop toggling and valid data will
be read on the next successive attempt. During programming, the Toggle Bit is valid after the rising
edge of the fourth #WE pulse in the four write pulse sequence. For chip erase, the Toggle Bit is valid
after the rising edge of the sixth #WE pulse in the six write pulse sequence. For page erase, the
Toggle Bit is valid after the last rising edge of the page erase #WE pulse. The Toggle Bit is active
during the page erase time-out.
Either #CE or #OE toggling will cause DQ6 to toggle.
7. TABLE OF OPERATING MODES
Device Bus Operations
PIN
MODE
#CE
#OE
#WE
DQ0
DQ7
Read
VIL
VIH
Dout
Write
VIL
VIH
VIL
Din
Standby
VIH
X
High Z
X
VIL
X
High Z/
Dout
Write Inhibit
X
VIH
High Z/
Dout
Output Disable
VIL
VIH
High Z
相關(guān)PDF資料
PDF描述
W39F010P-70 128K X 8 FLASH 5V PROM, 70 ns, PQCC32
W3DG6416V7D1 16M X 64 SYNCHRONOUS DRAM MODULE, ZMA144
W3DG6416V7D2 16M X 64 SYNCHRONOUS DRAM MODULE, DMA168
W3DG6432V75BD1-GG 32M X 64 SYNCHRONOUS DRAM MODULE, 5.4 ns, ZMA140
W3DG6432V75BD1-GG 32M X 64 SYNCHRONOUS DRAM MODULE, 5.4 ns, ZMA140
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
W39F010-90B 制造商:WINBOND 制造商全稱:Winbond 功能描述:128K 】 8 CMOS FLASH MEMORY
W39F010P-70B 制造商:WINBOND 制造商全稱:Winbond 功能描述:128K 】 8 CMOS FLASH MEMORY
W39F010P-70Z 制造商:WINBOND 制造商全稱:Winbond 功能描述:128K 】 8 CMOS FLASH MEMORY
W39F010P-90B 制造商:WINBOND 制造商全稱:Winbond 功能描述:128K 】 8 CMOS FLASH MEMORY
W39F010P-90Z 制造商:WINBOND 制造商全稱:Winbond 功能描述:128K 】 8 CMOS FLASH MEMORY