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參數(shù)資料
| 型號(hào)： | W3DG6418V10AD1-SG |
| 廠商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分類： | DRAM |
| 英文描述： | 16M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA144 |
| 封裝： | ROHS COMPLIANT, SO-DIMM-144 |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大?。?/td> | 187K |
| 代理商： | W3DG6418V10AD1-SG |
4
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
January 2006
Rev. 2
White Electronic Designs Corp. reserves the right to change products or specications without notice.
W3DG6418V-AD1
PRELIMINARY
OPERATING CURRENT CHARACTERISTICS
VCC = 3.3V, TA = 0°C ≤ +70°C
Version
Parameter
Symbol
Conditions
133/100
Units
Note
Operating Current
(One bank active)
ICC1
Burst Length = 1
tRC ≥ tRC(min)
IOL = 0mA
1280
mA
1
Precharge Standby Current
in Power Down Mode
ICC2P
CKE ≤ VIL(max), tCC = 10ns
16
mA
ICC2PS
CKE & CLK ≤ VIL(max), tCC = ∞
10
Active Standby Current in
Non-Power Down Mode
ICC3N
CKE ≥ VIH(min), CS ≥ VIH(min), tcc = 10ns Input
signals are changed one time during 20ns
400
mA
Operating Current (Burst mode)
ICC4
Io = mA
Page burst
4 Banks activated
tCCD = 2CLK
1320
mA
1
Refresh Current
ICC5
tRC ≥ tRC(min)
2640
mA
2
Self Refresh Current
ICC6
CKE ≤ 0.2V
24
mA
Notes:
1. Measured with outputs open.
2. Refresh period is 64ms.
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