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參數(shù)資料
| 型號： | W3DG6464FV10D1-GG |
| 廠商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分類： | DRAM |
| 英文描述： | 64M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, ZMA144 |
| 封裝： | ROHS COMPLIANT, SODIMM-144 |
| 文件頁數(shù)： | 6/10頁 |
| 文件大小： | 165K |
| 代理商： | W3DG6464FV10D1-GG |
W3DG6464FV-D1
5
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
August 2007
Rev. 1
White Electronic Designs Corp. reserves the right to change products or specications without notice.
ADVANCED*
OPERATING CURRENT CHARACTERISTICS
Notes: 1. Measured with outputs open.
2. Refresh period is 64ms.
3. ICC specications were calculated using qimonda components. Other manufactures DRAM may have different values.
Parameter
Symbol
Conditions
Version
Units
Note
133
100
Operating Current
(One bank active)
ICC1
Burst Length = 1
tRC
≥ tRC(min)
IOL = 0mA
816
656
mA
1
Precharge Standby Current
in Power Down Mode
ICC2P
CKE
≤ VIL(max), CS# = VIH(min)
32
mA
Precharge Standby Current
in Non-Power Down Mode
ICC2N
CKE
≥ VIH(min), CS# = VIH(min)
416
352
mA
Active Standby Current in
Power-Down Mode
ICC3P
CKE ≤ VIL(max), tCC = 10ns
80
mA
Active Standby Current in
Non-Power Down Mode
ICC3N
CKE ≤ VIH(min), CS
= VIH(min)
336
296
mA
Operating Current (Burst mode)
ICC4
Io = mA
Page burst
4 Banks activated
tCCD = 2CK
536
472
mA
1
Auto Refresh Current
ICC5
tRC
= tRC(min)
2,688
2,272
mA
2
Self Refresh Current
ICC6
CKE
≤ 0.2V
48
mA
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| W3DG6464V10D1 | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512MB- 64Mx64 SDRAM, UNBUFFERED W/PLL |
| W3DG6464V75D1 | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512MB- 64Mx64 SDRAM, UNBUFFERED W/PLL |
| W3DG6464V7D1 | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512MB- 64Mx64 SDRAM, UNBUFFERED W/PLL |
| W3DG6464V-D1 | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512MB- 64Mx64 SDRAM, UNBUFFERED W/PLL |
| W3DG6465V10D1 | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512MB- 64Mx64 SDRAM UNBUFFERED |
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