參數(shù)資料
型號(hào): W3EG6432S335D4I
廠(chǎng)商: MICROSEMI CORP-PMG MICROELECTRONICS
元件分類(lèi): DRAM
英文描述: 32M X 64 DDR DRAM MODULE, 0.7 ns, DMA200
封裝: SO-DIMM-200
文件頁(yè)數(shù): 1/12頁(yè)
文件大小: 185K
代理商: W3EG6432S335D4I
1
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
December 2004
Rev. 6
PRELIMINARY*
W3EG6432S-D4
OPERATING FREQUENCIES
DDR333 @CL=2.5
DDR266 @CL=2
DDR266 @CL=2.5
DDR266 @CL=2
DDR200 @CL=2
Clock Speed
166MHz
133MHz
100MHz
CL-tRCD-tRP
2.5-3-3
2-2-2
2.5-3-3
2-3-3
2-2-2
256MB – 32Mx64 DDR SDRAM UNBUFFERED
FEATURES
DDR200, DDR266 and DDR333
JEDEC design specications
Double-data-rate architecture
Industrial temperature
Bi-directional data strobes (DQS)
Differential clock inputs (CK & CK#)
Programmable Read Latency 2,2.5 (clock)
Programmable Burst Length (2,4,8)
Programmable Burst type (sequential & interleave)
Edge aligned data output, center aligned data input
Auto and self refresh
Serial presence detect
Power supply: 2.5V ± 0.20V
Industrial temperature options
Standard 200 pin SO-DIMM package
Package height option:
D4: 31.75mm (1.25")
NOTE: Consult factory for availability of:
Lead-free products
Vendor source control option
Industrial temperature option
DESCRIPTION
The W3EG6432S is a 32Mx64 Double Data Rate
SDRAM memory module based on 256Mb DDR SDRAM
components. The module consists of eight 32Mx8 DDR
SDRAMs in 66 pin TSOP packages mounted on a 200
pin FR4 substrate.
Synchronous design allows precise cycle control with the
use of system clock. Data I/O transactions are possible on
both edges and Burst Lengths allow the same device to be
useful for a variety of high bandwidth, high performance
memory system applications.
* This product is under development, is not qualied or characterized and is subject to
change without notice.
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