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參數(shù)資料
| 型號： | W3EG6465S202D4C |
| 廠商： | WHITE ELECTRONIC DESIGNS CORP |
| 元件分類： | DRAM |
| 英文描述： | 64M X 64 DDR DRAM MODULE, DMA200 |
| 封裝： | SO-DIMM-200 |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 89K |
| 代理商： | W3EG6465S202D4C |
5
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
W3EG6465S-D4
May 2004
Rev. 3
PRELIMINARY
IDD SPECIFICATIONS AND TEST CONDITIONS
Recommended operating conditions, 0°C TA 70°C, VCCQ = 2.5V ± 0.2V, VCC = 2.5V ± 0.2V
Parameter
Symbol Conditions
DDR266@CL=2
Max
2-2-2
DDR266@CL=2.5
Max
2.5-3-3
DDR266@CL=2
Max
2-3-3
DDR200@CL=2
Max
2-2-2
Units
Operating Current
IDD0
One device bank; Active - Precharge;
tRC=tRC(MIN); tCK=tCK(MIN); DQ,DM
and DQS inputs changing once per
clock cycle; Address and control inputs
changing once every two cycles.
1320
mA
Operating Current
IDD1
One device bank; Active-Read-Precharge;
Burst = 2; tRC=tRC(MIN);tCK=tCK(MIN);
Iout = 0mA; Address and control inputs
changing once per clock cycle.
1520
mA
Precharge Power-
Down Standby
Current
IDD2P
All device banks idle; Power- down mode;
tCK=tCK(MIN); CKE=(low)
48
mA
Idle Standby
Current
IDD2F
CS# = High; All device banks idle;
tCK=tCK(MIN); CKE = high; Address and
other control inputs changing once per
clock cycle. Vin = Vref for DQ, DQS and
DM.
400
mA
Active Power-Down
Standby Current
IDD3P
One device bank active; Power-down
mode; tCK(MIN); CKE=(low)
400
mA
Active Standby
Current
IDD3N
CS# = High; CKE = High; One device
bank; Active-Precharge; tRC=tRAS(MAX);
tCK=tCK(MIN); DQ, DM and DQS inputs
changing twice per clock cycle; Address
and other control inputs changing once
per clock cycle.
760
mA
Operating Current
IDD4R
Burst = 2; Reads; Continous burst; One
device bank active;Address and control
inputs changing once per clock cycle;
tCK=tCK(MIN); Iout = 0mA.
1760
mA
Operating Current
IDD4W
Burst = 2; Writes; Continous burst; One
device bank active; Address and control
inputs changing once per clock cycle;
tCK=tCK(MIN); DQ,DM and DQS inputs
changing twice per clock cycle.
2000
mA
Auto Refresh
Current
IDD5
tRC=tRC(MIN)
2480
mA
Self Refresh
Current
IDD6
CKE 0.2V
40
mA
Operating Current
IDD7A
Four bank interleaving Reads (BL=4)
with auto precharge with tRC=tRC (MIN);
tCK=tCK(MIN); Address and control inputs
change only during Active Read or Write
commands.
3840
mA
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