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參數(shù)資料
| 型號(hào)： | W3EG6467S262D4MG |
| 廠商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分類： | DRAM |
| 英文描述： | 64M X 64 DDR DRAM MODULE, 0.75 ns, DMA200 |
| 封裝： | ROHS COMPLIANT, SO-DIMM-200 |
| 文件頁數(shù)： | 8/12頁 |
| 文件大?。?/td> | 194K |
| 代理商： | W3EG6467S262D4MG |
5
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
W3EG6467S-D4
January 2005
Rev. 1
ADVANCED
White Electronic Designs Corp. reserves the right to change products or specications without notice.
IDD SPECIFICATIONS AND TEST CONDITIONS
0°C ≤ TA ≤ 70°C, VCCQ = 2.5V ±0.2V, VCC = 2.5V ±0.2V
Parameter
Symbol Conditions
DDR403
@CL=3
Max
DDR333
@CL=2.5
Max
DDR266
@CL=2, 2.5
Max
DDR200
@CL=2
Max
Units
Operating Current
IDD0
One device bank; Active - Precharge;
tRC=tRC(MIN); tCK=tCK(MIN); DQ,DM and
DQS inputs changing once per clock cycle;
Address and control inputs changing once
every two cycles.
1600
1440
1360
mA
Operating Current
IDD1
One device bank; Active-Read-Precharge;
Burst = 2; tRC=tRC(MIN);tCK=tCK(MIN); Iout =
0mA; Address and control inputs changing
once per clock cycle.
1800
1640
1560
mA
Precharge Power-
Down Standby Current
IDD2P
All device banks idle; Power- down mode;
tCK=tCK(MIN); CKE=(low)
48
mA
Idle Standby Current
IDD2F
CS# = High; All device banks idle;
tCK=tCK(MIN); CKE = high; Address and other
control inputs changing once per clock cycle.
Vin = Vref for DQ, DQS and DM.
400
320
mA
Active Power-Down
Standby Current
IDD3P
One device bank active; Power-down mode;
tCK(MIN); CKE=(low)
560
480
mA
Active Standby Current
IDD3N
CS# = High; CKE = High; One device
bank; Active-Precharge; tRC=tRAS(MAX);
tCK=tCK(MIN); DQ, DM and DQS inputs
changing twice per clock cycle; Address and
other control inputs changing once per clock
cycle.
880
720
mA
Operating Current
IDD4R
Burst = 2; Reads; Continous burst; One
device bank active;Address and control
inputs changing once per clock cycle;
tCK=tCK(MIN); Iout = 0mA.
2160
1840
mA
Operating Current
IDD4W
Burst = 2; Writes; Continous burst; One
device bank active; Address and control
inputs changing once per clock cycle;
tCK=tCK(MIN); DQ,DM and DQS inputs
changing twice per clock cycle.
2160
1800
mA
Auto Refresh Current
IDD5
tRC=tRC(MIN)
2240
2000
mA
Self Refresh Current
IDD6
CKE
≤ 0.2V
48
mA
Operating Current
IDD7A
Four bank interleaving Reads (BL=4)
with auto precharge with tRC=tRC (MIN);
tCK=tCK(MIN); Address and control inputs
change only during Active Read or Write
commands.
3120
2960
2720
mA
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