- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄245651 > W3EG72126S262JD3SG (MICROSEMI CORP-PMG MICROELECTRONICS) 128M X 72 DDR DRAM MODULE, 0.75 ns, DMA184 PDF資料下載
參數(shù)資料
| 型號： | W3EG72126S262JD3SG |
| 廠商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分類： | DRAM |
| 英文描述： | 128M X 72 DDR DRAM MODULE, 0.75 ns, DMA184 |
| 封裝： | ROHS COMPLIANT, DIMM-184 |
| 文件頁數(shù)： | 14/15頁 |
| 文件大?。?/td> | 263K |
| 代理商： | W3EG72126S262JD3SG |
White Electronic
W3EG72126S-D3
-JD3
-AJD3
8
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
November 2004
Rev. 3
PRELIMINARY
DDR SDRAM COMPONENT ELECTRICAL CHARACTERISTICS AND
RECOMMENDED AC OPERATING CONDITIONS
0°C ≤ TA ≤ +70°C; VCC = +2.5V ±0.2V, VCCQ = +2.5V ±0.2V
AC Characteristics
335
262
263/265
202
Parameter
Symbol
Min
Max
Min
Max
Min
Max
Min
Max
Units
Notes
Access window of DQs from CK, CK#
tAC
-0.7
+0.7
-0.75
+0.75
-0.75
+0.75
-0.75
+0.75
ns
CK high-level width
tCH
0.45
0.55
0.45
0.55
0.45
0.55
0.45
0.55
tCK
16
CK low-level width
tCL
0.45
0.55
0.45
0.55
0.45
0.55
0.45
0.55
tCK
16
Clock cycle time
CL=2.5 tCK (2.5)
6
13
7.5
13
7.5
13
7.5
13
ns
22
CL=2
tCK (2)
7.5
13
7.5
13
7.5
13
ns
22
DQ and DM input hold time relative to DQS
tDH
0.45
0.5
ns
14,17
DQ and DM input setup time relative to DQS
tDS
0.45
0.5
ns
14,17
DQ and DM input pulse width (for each input)
tDIPW
1.75
ns
17
Access window of DQS from CK, CK#
tDQSCK
-0.6
+0.6
-0.75
+0.75
-0.75
+0.75
-0.75
+0.75
ns
DQS input high pulse width
tDQSH
0.35
tCK
DQS input low pulse width
tDQSL
0.35
tCK
DQS-DQ skew, DQS to last DQ valid, per group,
per access
tDQSQ
0.45
0.5
ns
13,14
Write command to rst DQS latching transition
tDQSS
0.75
1.25
0.75
1.25
0.75
1.25
0.75
1.25
tCK
DQS falling edge to CK rising - setup time
tDSS
0.2
tCK
DQS falling edge from CK rising - hold time
tDSH
0.2
tCK
Half clock period
tHP
tCH,
tCL
tCH,
tCL
tCH,
tCL
tCH,
tCL
ns
18
Data-out high-impedance window from CK, CK#
tHZ
+0.7
+0.75
ns
8,19
Data-out low-impedance window from CK, CK#
tLZ
-0.7
-0.75
ns
8,20
Address and control input hold time (fast slew rate)
tIHf
0.75
0.90
ns
6
tISf
0.75
0.90
ns
6
Address and control input hold time (slow slew rate)
tIHs
0.8
1
ns
6
Address and control input setup time (slow slew rate)
tISs
0.8
1
ns
6
Address and control input pulse width (for each input)
tIPW
2.2
ns
LOAD MODE REGISTER command cycle time
tMRD
12
15
ns
DQ-DQS hold, DQS to rst DQ to go non-valid, per
access
tQH
tHP-
tQHS
tHP-
tQHS
tHP-
tQHS
tHP-
tQHS
ns
13,14
Data hold skew factor
tQHS
0.55
0.75
ns
ACTIVE to PRECHARGE command
tRAS
42
70,000
40
120,000
40
120,000
40
120,000
ns
15
ACTIVE to READ with Auto precharge command
tRAP
15
ns
ACTIVE to ACTIVE/AUTO REFRESH command period
tRC
60
ns
AUTO REFRESH command period
tRFC
72
75
ns
21
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| W3H128M72E2-667NBM | 128M X 72 DDR DRAM, 0.5 ns, PBGA208 |
| W7NCF01GH10CSAJG | 64M X 16 FLASH 3.3V PROM CARD, 150 ns, UUC |
| W7NCF01GH20CS6FG | 64M X 16 FLASH 3.3V PROM CARD, 150 ns, UUC |
| W7NCF01GH20CSADG | 64M X 16 FLASH 3.3V PROM CARD, 150 ns, UUC |
| W7NCF01GH20IS2FG | 64M X 16 FLASH 3.3V PROM CARD, 150 ns, UUC |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W3EG72126S263AJD3 | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:1GB-128Mx72 DDR SDRAM REGISTERED ECC w/PLL |
| W3EG72126S263D3 | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:1GB-128Mx72 DDR SDRAM REGISTERED ECC w/PLL |
| W3EG72126S263JD3 | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:1GB-128Mx72 DDR SDRAM REGISTERED ECC w/PLL |
| W3EG72126S265AJD3 | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:1GB-128Mx72 DDR SDRAM REGISTERED ECC w/PLL |
| W3EG72126S265D3 | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:1GB-128Mx72 DDR SDRAM REGISTERED ECC w/PLL |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。