參數(shù)資料
型號(hào)： W3H32M72E-667SB2M
廠商： MICROSEMI CORP-PMG MICROELECTRONICS
元件分類： DRAM
英文描述： 32M X 72 DDR DRAM, 0.65 ns, PBGA208
封裝： 16 X 20 MM, 1 MM PITCH, PLASTIC, BGA-208
文件頁(yè)數(shù)： 23/25頁(yè)
文件大?。?/td> 1062K
代理商： W3H32M72E-667SB2M
W3H32M72E-XSB2X
November 2010 2010 Microsemi Corporation. All rights reserved.
7
Microsemi Corporation (602) 437-1520 www.whiteedc.com
Rev. 3
www.microsemi.com
Microsemi Corporation reserves the right to change products or specications without notice.
t VTD1
CKE
RTT
Power-up:
VCC and stable
clock (CK, CK#)
T = 200μs (MIN)3
High-Z
DM
7
DQS
7
High-Z
Address
9
CK
CK#
tCL
VTT1
VREF
Command
NOP3
PRE
T0
Ta0
Don’t care
tCL
tCK
VCC
ODT
DQ
7
High-Z
Tb0
MR with
200 cycles of CK3
DLL RESET
t RFC
LM8
PRE9
LM7
REF10
LM11
Tg0
Th0
Ti0
Tj0
MR without
DLL RESET
EMR with
OCD default
Tk0
Tl0
Tm0
Te0
Tf0
EMR(2)
EMR(3)
t MRD
LM6
LM5
A10 = 1
t RPA
Tc0
Td0
SSTL_18
low level 8
Valid 14
Valid
Indicates a Break in
Time Scale
LM12
EMR with
OCD exit
LM13
Normal
operation
Code
A10 = 1
Code
t MRD
t RPA
t RFC
VCCQ
t MRD
See note 4
EMR with
DLL ENABLE
T = 400ns (MIN)4
LVCMOS
low level 8
FIGURE 4 – POWER-UP AND INITIALIZATION
Notes appear on page 7
相關(guān)PDF資料
PDF描述
W3H32M72E-667SBC 32M X 72 DDR DRAM, 0.65 ns, PBGA208
W3H64M16E-400BC 64M X 16 DDR DRAM, 0.6 ns, PBGA79
W3H64M64E-400SBC 64M X 64 DDR DRAM, 0.6 ns, PBGA208
W3H64M72E-400ESI 64M X 72 DDR DRAM, 0.6 ns, PBGA208
W3H64M72E-400ESI 64M X 72 DDR DRAM, 0.6 ns, PBGA208
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
W3H32M72E-667SB2M/T/R 制造商:Microsemi Corporation 功能描述:PBGA,32M X72,DDR2 SDRAM, 1.8V - Tape and Reel
W3H32M72E-667SBC 制造商:Microsemi Corporation 功能描述:32M X 72 DDR2, 1.8V, 667MHZ, 208PBGA COMMERICAL TEMP. - Bulk
W3H32M72E-667SBI 制造商:Microsemi Corporation 功能描述:32M X 72 DDR2, 1.8V, 667MHZ, 208PBGA INDUSTRIAL TEMP. - Bulk
W3H32M72E-667SBM 制造商:PMG/Microsemi 功能描述:
W3H32M72E-ES 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package
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