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參數(shù)資料
| 型號： | W3HG2128M72ACER665AD6SG |
| 廠商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分類： | DRAM |
| 英文描述： | 256M X 72 DDR DRAM MODULE, 0.45 ns, DMA240 |
| 封裝： | ROHS COMPLIANT, DIMM-240 |
| 文件頁數(shù)： | 12/13頁 |
| 文件大?。?/td> | 303K |
| 代理商： | W3HG2128M72ACER665AD6SG |
W3HG2128M72ACER-AD6
PRELIMINARY
8
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
October 2006
Rev. 6
DDR2 SDRAM COMPONENT AC TIMING PARAMETERS & SPECIFICATION (Continued)
0°C ≤ TCASE < +85°C; VCCQ = + 1.8V ± 0.1V, VCC = +1.8V ± 0.1V
AC CHARACTERISTICS
806
665
534
403
PARAMETER
SYMBOL
MIN
MAX
MIN
MAX
MIN
MAX
MIN
MAX
UNIT
Notes
Self
Refresh
Refresh to Active or Refresh to
Refresh command interval
tRFC (2GB)
TBD
105
70,000
105
70,000
105
70,000
ns
14
tRFC (4GB)
TBD
127.5
70,000
127.5
70,000
127.5
70,000
ns
14
Average periodic refresh
interval
tREFI
TBD
200
7.8
s
14
Exit self refresh to non-read
command
tXSNR
TBD
tRFC
(MIN)
+10
tRFC
(MIN)
+10
tRFC
(MIN)
+10
ns
Exit self refresh to read
command
tXSRD
TBD
200
tCK
Exit self refresh timing
reference
tISXR
TBD
tIS
ps
6, 29
ODT
ODT turn-on delay
tAOND
TBD
222222
tCK
ODT turn-on
tAON
TBD
tAC(MIN)
tAC(MAX)
+700
tAC(MIN)
tAC(MAX)
+1,000
tAC(MIN)
tAC(MAX)
+1,000
ps
25
ODT turn-off delay
tAOFD
TBD
2.5
tCK
ODT turn-off
tAOF
TBD
tAC(MIN)
tAC(MAX)
+600
tAC(MIN)
tAC(MAX)
+600
tAC(MIN)
tAC(MAX)
+600
ps
26
ODT turn-on (power-down
mode)
tAONPD
TBD
tAC(MIN)
+2,000
2x tCK +
tAC (MAX)
+ 1,000
tAC(MIN)
+2,000
2x tCK +
tAC (MAX)
+ 1,000
tAC(MIN)
+2,000
2x tCK +
tAC (MAX)
+ 1,000
ps
ODT turn-off (power-down
mode)
tAOFPD
TBD
tAC(MIN)
+2,000
2x tCK +
tAC (MAX)
+ 1,000
tAC(MIN)
+2,000
2x tCK +
tAC (MAX)
+ 1,000
tAC(MIN)
+2,000
2x tCK +
tAC (MAX)
+ 1,000
tCK
ODT to power-down entry
latency
tANPD
TBD
333
tCK
ODT power-down exit latency
tAXPD
TBD
888
tCK
Power-Down
Exit active power-down to
READ command, MR[bit12=0]
tXARD
TBD
222
tCK
Exit active power-down to
READ command, MR[bit12=1]
tXARDS
TBD
7-AL
6-AL
tCK
Exit precharge power-down to
any non-READ command.
tXP
TBD
222
tCK
CKE minimum high/low time
tCKE
TBD
333
tCK
34
NOTE:
AC specication is based on
MICRON components. Other DRAM manufactures specication may be different.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W3HG2128M72ACER665AD6XG | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:2GB - 2x128Mx72 DDR2 SDRAM REGISTERED, w/PLL, VLP |
| W3HG2128M72ACER806AD6XG | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:2GB - 2x128Mx72 DDR2 SDRAM REGISTERED, w/PLL, VLP |
| W3HG2128M72ACER-AD6 | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:2GB - 2x128Mx72 DDR2 SDRAM REGISTERED, w/PLL, VLP |
| W3HG2128M72ACERXXXAD6MG | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:2GB - 2x128Mx72 DDR2 SDRAM REGISTERED, w/PLL, VLP |
| W3HG2128M72ACERXXXAD6SG | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:2GB - 2x128Mx72 DDR2 SDRAM REGISTERED, w/PLL, VLP |
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