參數(shù)資料
型號(hào): W3HG2256M72ACER665D6IMG
廠商: WHITE ELECTRONIC DESIGNS CORP
元件分類: DRAM
英文描述: 512M X 72 DDR DRAM MODULE, 0.45 ns, DMA240
封裝: ROHS COMPLIANT, DIMM-240
文件頁數(shù): 12/12頁
文件大?。?/td> 0K
代理商: W3HG2256M72ACER665D6IMG
WV3HG2256M72AER-D6
ADVANCED
9
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
October 2006
Rev. 2
DDR2 SDRAM COMPONENT AC TIMING PARAMETERS & SPECIFICATION (Continued)
VCC = +1.8V ± 0.1V
AC Characteristics
806
665
534
403
Parameter
Symbol
Min
Max
Min
Max
Min
Max
Min
Max
Unit
Refresh to Active or Refresh to Refresh
command interval
tRFC
TBD
127.5
70,000
127.5
70,000
127.5
70,000
ns
Average periodic refresh interval
tREFI
TBD
7.8
μs
Exit self refresh to non-read command
tXSNR
TBD
tRFC
(MIN)
+10
tRFC
(MIN)
+10
tRFC
(MIN)
+10
ns
Exit self refresh to read command
tXSRD
TBD
200
tCK
Exit self refresh timing reference
tISXR
TBD
tIS
ps
ODT
ODT turn-on delay
tAOND
TBD
222222
tCK
ODT turn-on
tAON
TBD
tAC(MIN)
tAC(MAX)
+1,000
tAC(MIN)
tAC(MAX)
+1,000
tAC(MIN)
tAC(MAX)
+1,000
ps
ODT turn-off delay
tAOFD
TBD
2.5
tCK
ODT turn-off
tAOF
TBD
tAC(MIN)
tAC(MAX)
+600
tAC(MIN)
tAC(MAX)
+600
tAC(MIN)
tAC(MAX)
+600
ps
ODT turn-on (power-down mode)
tAONPD
TBD
tAC(MIN)
+2,000
2x tCK +
tAC (MAX)
+ 1,000
tAC(MIN)
+2,000
2x tCK +
tAC (MAX)
+ 1,000
tAC(MIN)
+2,000
2x tCK +
tAC (MAX)
+ 1,000
ps
ODT turn-off (power-down mode)
tAOFPD
TBD
tAC(MIN)
+2,000
2.5x tCK
+ tAC
(MAX)
+
1,000
tAC(MIN)
+2,000
2.5x tCK
+ tAC
(MAX)
+
1,000
tAC(MIN)
+2,000
2.5x tCK
+ tAC
(MAX)
+
1,000
tCK
ODT to power-down entry latency
tANPD
TBD
333
tCK
ODT power-down exit latency
tAXPD
TBD
888
tCK
Power-Down
Exit active power-down to READ
command, MR[bit12=0]
tXARD
TBD
222
tCK
Exit active power-down to READ
command, MR[bit12=1]
tXARDS
TBD
7-AL
6-AL
tCK
Exit precharge power-down to any non-
READ command.
tXP
TBD
222
tCK
CKE minimum high/low time
tCKE
TBD
333
tCK
Note:
AC specication is based on
SAMSUNG components. Other DRAM manufactures specication may be different.
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W3HG2256M72ACER534D6ISG 512M X 72 DDR DRAM MODULE, 0.5 ns, DMA240
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