- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄68459 > W72M64VB90BC (WHITE ELECTRONIC DESIGNS CORP) SPECIALTY MEMORY CIRCUIT, PBGA159 PDF資料下載
參數(shù)資料
| 型號(hào)： | W72M64VB90BC |
| 廠(chǎng)商： | WHITE ELECTRONIC DESIGNS CORP |
| 元件分類(lèi)： | 存儲(chǔ)器 |
| 英文描述： | SPECIALTY MEMORY CIRCUIT, PBGA159 |
| 封裝： | 13 X 22 MM, PLASTIC, BGA-159 |
| 文件頁(yè)數(shù)： | 11/16頁(yè) |
| 文件大小： | 660K |
| 代理商： | W72M64VB90BC |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)當(dāng)前第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)
4
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
W72M64VB-XBX
June 2009
Rev. 2
AC CHARACTERISTICS – WRITE/ERASE/PROGRAM OPERATIONS – CS# CONTROLLED
VCC = 3.3V ± 0.3V, -55°C ≤ TA ≤ +125°C
Parameter
Symbol
-90
-100
-120
Unit
Min
Max
Min
Max
Min
Max
Write Cycle Time (3)
tAVAV
tWC
90
100
120
ns
Write Enable Setup Time
tWLEL
tWS
000
ns
Chip Select Pulse Width
tELEH
tCP
35
45
50
ns
Address Setup Time
tAVEL
tAS
0
ns
Data Setup Time
tDVEH
tDS
45
50
ns
Data Hold Time
tEHDX
tDH
000
ns
Address Hold Time
tELAX
tAH
45
50
ns
Chip Select Pulse Width High (3)
tEHEL
tCPH
35
30
ns
Duration of Word Programming Operation (1)
tWHWH1
360
μs
Sector Erase Time (2) (5)
tWHWH2
10
sec
Read Recovery Time Before Write (3)
tGHEL
000
ns
Chip Programming Time (4)
42
sec
NOTES:
1.
Typical value for tWHWH1 is 7μs.
2.
Typical value for tWHWH2 is 0.4 sec.
3.
Guaranteed by design, but not tested.
4.
Typical value is 36 sec. The typical chip programming time is considerably less than the maximum chip
programming time listed, since most bytes program faster than the maximum program times listed.
5.
At temperatures > + 85C maximum erase time is 25s
FIGURE 2
Current Source
IOL
IOH
CEFF = 50 pf
VZ 1.5V
(Bipolar Supply)
D.U.T.
AC Test Circuit
AC Test Conditions
Parameter
Typ
Unit
Input Pulse Levels
VIL = 0, VIH = 2.5
V
Input Rise and Fall
5
ns
Input and Output Reference Level
1.5
V
Output Timing Reference Level
1.5
V
Notes:
VZ is programmable from -2V to +7V.
IOL & IOH programmable from 0 to 16mA.
Tester Impedance Z0 = 75W.
VZ is typically the midpoint of VOH and VOL.
IOL & IOH are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| W73B586A-10L | 32K X 18 CACHE SRAM, 10 ns, PQCC52 |
| W73B586A-11L | 32K X 18 CACHE SRAM, 11 ns, PQCC52 |
| W764M32V120SBM | 64M X 32 FLASH 3V PROM, 120 ns, PBGA107 |
| W764M32V120SBC | 64M X 32 FLASH 3V PROM, 120 ns, PBGA107 |
| W764M32V120SBI | 64M X 32 FLASH 3V PROM, 120 ns, PBGA107 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W72M64VB-90BI | 制造商:Microsemi Corporation 功能描述:72 X 64 SRAM MODULE, - Bulk |
| W72M64VB-90BM | 制造商:White Electronic Designs 功能描述:Flash Module Parallel 128Mbit 制造商:Microsemi Corporation 功能描述:72 X 64 SRAM MODULE, - Bulk |
| W72M64VK100BC | 制造商:WEDC 制造商全稱(chēng):White Electronic Designs Corporation 功能描述:2Mx64 3.3V Simultaneous Operation Flash Multi-Chip Package |
| W72M64VK100BI | 制造商:WEDC 制造商全稱(chēng):White Electronic Designs Corporation 功能描述:2Mx64 3.3V Simultaneous Operation Flash Multi-Chip Package |
| W72M64VK100BM | 制造商:WEDC 制造商全稱(chēng):White Electronic Designs Corporation 功能描述:2Mx64 3.3V Simultaneous Operation Flash Multi-Chip Package |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。