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參數(shù)資料
| 型號： | W7MG21M32SVB70BNC |
| 英文描述： | 8MB/4MB (2x1Mx32 / 1Mx32) MirrorBitTM 3.0V, Boot Sector Flash Memory Module |
| 中文描述： | 8MB/4MB（2x1Mx32 / 1Mx32）MirrorBitTM 3.0V，引導(dǎo)扇區(qū)閃存模塊 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 179K |
| 代理商： | W7MG21M32SVB70BNC |
1
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
W7MG1M32SVx-BN
W7MG21M32SVx-BN
May 2004
Rev. 2
PRELIMINARY*
DESCRIPTION
The W7MG1M32SVx-BN and W7MG21M32SVx-BN are
or ga nized as one and two banks of 1Mx32 re spec ive y.
The modules are based on AMDs MirrorBit AM29LV160M
- 1Mx16 or S29AL016M (optional) Flash device in TSOP
packages which are mount ed on an FR4 sub strate.
Both modules offer access times between 70 and 120ns
allowing for operation of high-speed mi cro pro ces sors
without wait states.
FEATURES
1Mx32 and 2x1Mx32 Densities
Based on AMD - AM29LV160M Flash Device
Spansion - S29AL016M (optional)
High Performance
Access time as fast as 70ns
0.7s typical sector erase time
3V for read, erase, and program operations
Flexible, Sector Architecture
One 16Kbyte, two 8Kbyte, one 32Kbyte and
thirty-one 64Kbyte sectors.
Any combination of sectors can be erased
Also supports full chip erase
W7MG1M32SVx-BN: 1Mx32 80 PIN SIMM
WE2#
W7MG21M32SVx-BN: 2x1Mx32 80 PIN SIMM
8MB/4MB (2x1Mx32 / 1Mx32) MirrorBit 3.0V, Boot Sector
Flash Memory Module
FIG. 1 – BLOCK DIAGRAMS
DQ16-31
1Mx16
WE#
CE#
CE#
0-19
DQ0-15
DQ0-15
1Mx16
WE#
CE#
CE#
CE0#
OE#
0-19
Addr 0-19
DQ0-15
WE0#
1Mx16
WE#
CE#
CE#
0-19
DQ0-15
WE2#
1Mx16
WE#
CE#
CE#
CE0#
OE#
Addr 0-19
0-19
DQ0-15
WE0#
DQ16-31
1Mx16
WE#
CE#
CE#
Addr
DQ0-15
DQ0-15
1Mx16
WE#
CE#
CE#
CE1#
Addr
DQ0-15
Top boot block configurations
Bottom boot block optional. Contact WEDC.
Embedded Erase Algorithms
Automatically preprograms and erases the chip
or any combination of sectors
Embedded Program Algorithms
Automatically programs and verifies data at
specified ad dress
Data Polling and Toggle Bit feature for detection of
pro gram or erase cycle completion
Low Power Dissipation
30mA per Device Active Current
10μA per Device CMOS Standby Current
Single 3.3V ±10% Supply
CMOS and TTL Compatible Inputs and Outputs
Commercial and industrial operating temperature
range
BNC = 0°C to 70°C Commercial
BNI = -40°C to 85°C Industrial
Package
80 Pin SIMM (JEDEC) Standard
* This product is under development, is not qualified or characterized and is subject to
change without notice.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| W7MG21M32SVB70BNI | 8MB/4MB (2x1Mx32 / 1Mx32) MirrorBitTM 3.0V, Boot Sector Flash Memory Module |
| W7MG21M32SVB90BNC | 8MB/4MB (2x1Mx32 / 1Mx32) MirrorBitTM 3.0V, Boot Sector Flash Memory Module |
| W7MG21M32SVB90BNI | 8MB/4MB (2x1Mx32 / 1Mx32) MirrorBitTM 3.0V, Boot Sector Flash Memory Module |
| W7MG21M32SVT120BNC | 8MB/4MB (2x1Mx32 / 1Mx32) MirrorBitTM 3.0V, Boot Sector Flash Memory Module |
| W7MG21M32SVT120BNI | 8MB/4MB (2x1Mx32 / 1Mx32) MirrorBitTM 3.0V, Boot Sector Flash Memory Module |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W7MG21M32SVB70BNI | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:8MB/4MB (2x1Mx32 / 1Mx32) MirrorBitTM 3.0V, Boot Sector Flash Memory Module |
| W7MG21M32SVB90BNC | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:8MB/4MB (2x1Mx32 / 1Mx32) MirrorBitTM 3.0V, Boot Sector Flash Memory Module |
| W7MG21M32SVB90BNI | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:8MB/4MB (2x1Mx32 / 1Mx32) MirrorBitTM 3.0V, Boot Sector Flash Memory Module |
| W7MG21M32SVT120BNC | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:8MB/4MB (2x1Mx32 / 1Mx32) MirrorBitTM 3.0V, Boot Sector Flash Memory Module |
| W7MG21M32SVT120BNI | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:8MB/4MB (2x1Mx32 / 1Mx32) MirrorBitTM 3.0V, Boot Sector Flash Memory Module |
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